2019年3月25日14：30，北京大学微纳电子学系优秀校友、来自三星公司的许诺博士应邀来访，并在微纳电子大厦103报告厅做了题为《STT-MRAM and Emerging Spintronics: New Device Technology and Computing Paradigms》的学术报告。
STT-MRAM and Emerging Spintronics: New Device Technology and Computing Paradigms
After more than 20 year's development since its original invention, Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has finally become commercialized as a replacement to existing embedded memory components for low power electronics. Moving forward, future STT-MRAMs will have several evolutionary directions (at material and structural landscape) to sustain their high performance when integrated to advanced logic platforms (14nm and below). Besides, other emerging spintronics, such as spin-orbital torque (SOT), skyrmion and multi-ferroic devices, etc. are under extensive investigation. The success of technology achievement will transfer to the innovation of new computing architectures, e.g., the near/in memory computing paradigms for the training/inference of deep neural networks and general scope approximate computing models. Another interesting research topic is related with spin qubits for demonstrating medium/large-scale quantum computing infrastructure.