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2019-03-22

美国高通公司技术总监袁骏博士到访微纳电子学系

  2019年3月21日9:30,来自高美国通公司的技术总监袁骏博士应邀访问北京大学微纳电子学系,并在微纳电子大厦103报告厅做了题为 “Design & Technology Co-optimization for High Performance & Low Power Mobile SoC Productization”的学术报告。

微纳电子学系黄如院士、黎明研究员、贺明研究员、安霞副教授、崔小欣副教授、王润声副教授、许晓燕副教授等多位老师以及数十位研究生、本科生参加了报告会,并与报告人进行了深入、热烈的讨论。

 

Design & Technology Co-optimization for High Performance & Low Power Mobile SoC Productization

Mobile industry has mobile law (generation per decade), Mobile device continues to follow semiconductor industry Moore’s law scaling into 7nm regime. In this talk, we present Qualcomm Snapdragon mobile-SOC flagship evolution with increased chip speed & function but reduced Chip power every year (including latest flagship of SDM855), which was achieved with technology improvement, Vdd scaling and design innovation. Vdd scaling enhanced by HK/MG & FinFET structure is difficult to continue further which is limited by non-scalable Sub-threshold Swing. Design & process co-optimization are crucial for future mobile SOC flagship bring up with high performance and low power.


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