2018年12月27日17：00，来自美国加州大学洛杉矶分校电气和计算机工程系邵启明博士应邀访问微纳电子学研究院，在微纳电子大厦205报告厅做了题为 “Magnetic memory with topological insulators and ferrimagnetic insulators”的学术报告。
Magnetic memory with topological insulators and ferrimagnetic insulators
Ubiquitous smart devices and internet of things create tremendous data every day, shifting computing diagram towards data-driven. Magnetic memory is one of the leading contenders for the embedded memory in the future computing diagram. My research concerns innovating new types of magnetic memory to achieve ultrahigh energy efficiency, ultracompact size, and ultrafast speed from a perspective of material and heterostructure design. Improving energy efficiency of magnetic memory requires improving charge-to-spin conversion efficiency and reducing magnetic damping. We utilize topological insulators to achieve a conversion efficiency larger than one and integrate topological insulators into room temperature magnetic memories, which promises future ultralow power dissipation. We also investigate magnetic insulators as the potential information carriers, which could have much lower damping. To have a better scaling performance, we investigate skyrmions in magnetic thin films, which are arguably the smallest spin texture in nature. Especially, we have identified room temperature stable skyrmions in magnetic insulators, which provide a new platform for exploring fundamental physics and pursuing practical applications. To have the highest operation speed, we explore compensated ferrimagnetic insulators, which could have THz dynamics due to the strong exchange coupling field. We realize energy efficient switching of the ferrimagnetic insulator in both ferromagnetic and antiferromagnetic states, promising electrical manipulation of ultrafast dynamics.