张盛东 博士，微电子学系教授、博士生导师。获北京大学微电子学系理学博士学位、东南大学电子工程系工学硕士和工学学士学位。目前所从事的主要研究领域为：柔性和透明电子技术，显示驱动芯片设计，氧化物半导体器件与电路，显示屏上系统集成（System on Panel, SoP) 以及新型纳米光电器件等。在国际权威学术刊物Advanced Materials，Advanced Functional Materials, Advanced Electronic Materials, ACS Applied Material & Interfaces, Applied Physics Letters, Nanoscale, IEEE Journal / Transactions / Letters上发表论文近100篇。获授权的中外发明专利118件（美国10件）。部分专利已转让京东方、华星光电、龙腾光电等大中型显示企业并形成规模量产。曾获全国优秀博士论文奖、国家技术发明二等奖、北京市科学技术一等奖、广东省科学技术二等奖和深圳市技术发明一等奖等，并获国务院特殊津贴专家称号。
Email：zhangsd at pku.edu.cn
Journal Papers:
(1) Huiling Lu, Xiaoliang Zhou, Ting Liang, Letao Zhang, and Shengdong Zhang, “Nonlinear photocurrent-intensity behavior of amorphous InZnO thin film transistors”, Applied Physics Letters, no. 4, vol. 112, 042103, 2018.
(2) Junchen Dong, Huijin Li, Dedong Han, Wen Yu, Zhen Luo, Yi Liang, Shengdong Zhang, Xing Zhang, and Yi Wang, “Investigation of c-axis-aligned crystalline gadolinium doped aluminum-zinc-oxide films sputtered at room-temperature”, Applied Physics Letters, vol. 112, 012104, 2018.
(3) Huijin Li, Dedong Han, Junchen Dong, WenYu, Yi Liang, Zhen Luo, Shengdong Zhang, Xing Zhang, Yi Wang, “Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition”, Applied Surface Science, 2018.
(4) Xiang Xiao, Letao Zhang, Yang Shao, Xiaoliang Zhou, Hongyu He, and Shengdong Zhang, “Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor”, ACS Appl. Mater. Interfaces, December 13, 2017.
(5) Huiling Lu, Xiaoliang Zhou, Ting Liang, Xiaobin Bi, Letao Zhang, and Shengdong Zhang, “Oxide Thin-Film Transistors with IMO and IGZO Stacked Active Layers for UV Detection”, IEEE Journal of the Electron Devices Society. Vol. 5, no. 6, pp. 504-508, 2017.
(6) Hongyu He, Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng and Shengdong Zhang, “Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistoat Different Temperatures Considering Both Deep and Tail Trap States”, IEEE Trans. on Electron Devices, vol. 64, no. 9, pp. 3654 – 3660, 2017.
(7) Xiaoliang Zhou, Yang Shao, Letao Zhang, Huiling Lu, Hongyu He, Dedong Han, Yi Wang, and Shengdong Zhang, “Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors under Positive Gate-Bias Stress”, IEEE Electron Device Letters, vol. 38, no. 9, pp. 1252-1255, 2017.
(8) Yizhe Sun, Yibin Jiang, Huiren Peng, Jiangliu Wei, Shengdong Zhang* and Shuming Chen, “Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer”, Nanoscale, vol. 9, no. 26, pp. 8893–9248, 2017.
(9) Letao Zhang, Xiaoliang Zhou, Baozhu Chang, Longyan Wang, Yuxiang Xiao, Hongyu He, and Shengdong Zhang, “Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer”, Materials Science in Semiconductor Processing, 68 (2017) 147–151.
(10) Longyan Wang, Yin Sun, Xintong Zhang, Lining Zhang, Shengdong Zhang and Mansun Chan,“Tunneling Contact IGZO TFTs with Reduced Saturation Voltages”, Applied Physics Letters, vol. 110, 152105, 2017.
(11) Wen Yu, Dedong Han, Junchen Dong, Yingying Cong, Guodong Cui, Yi Wang, Shengdong Zhang, “AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer”, IEEE Trans. on Electron Devices, vol. 64, no. 5, pp. 2228 - 2232, 2017.
(12) Xiaoliang Zhou, Yang Shao, Letao Zhang, Xiang Xiao, Dedong Han, Yi Wang, and Shengdong Zhang, “Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors”, IEEE Electron Device Letters, vol. 38, no. 4, pp. 465 - 468, 2017.
(13) Letao Zhang, Xiaoliang Zhou, Huan Yang, Hongyu He, Longyan Wang, Min Zhang, and Shengdong Zhang, “Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors”, IEEE Electron Device Letters, vol. 38, no. 2, pp. 213 - 216, 2017.
(14) Yingying Cong, Dedong Han, Junchen Dong, Shengdong Zhang, Xing Zhang, and Yi Wang, “Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate”, SCIENTIFIC REPORTS Volume: 7 Article Number: 1497 Published: MAY 4 2017.
(15) Songnan Du, Gongtan Li, Xuhong Cao, Yan Wang, Huiling Lu, Shengdong Zhang, Chuan Liu and Hang Zhou, “Oxide Semiconductor Phototransistor with Organolead Trihalide Perovskite Light Absorber”, Advanced Electronic Materials, Vol. 3, Issue 4, Version of Record online: 24 FEB 2017.
(16) Guodong Cui, Dedong Han, Junchen Dong, Yingying Cong, Xiaomi Zhang, Huijin Li, Wen Yu, Shengdong Zhang, Xing Zhang and Yi Wang, “Effects of channel structure consisting of ZnO/Al2O3 multilayers on thin-film transistors fabricated by atomic layer deposition”, Japanese Journal of Applied Physics, Volume 56, Number 4S, 04CG03, 2017.
(17) Yan Wang, Raymond Fullon, Muharrem Acerce, Christopher E. Petoukhoff, Jieun Yang, Chenggan Chen, Songnan Du, Sin Ki Lai, Shu Ping Lau, Damien Voiry, Deirdre O’Carroll, Gautam Gupta, Aditya D. Mohite, Shengdong Zhang, Hang Zhou, and Manish Chhowalla, “Solution-Processed MoS2/Organolead Trihalide Perovskite Photodetectors”, Advanced Materials, Vol. 29, no. 4, Jan. 25, 2017.
(18) Huijin Li, Dedong Han, Liqiao Liu, Junchen Dong, Guodong Cui, Shengdong Zhang, Xing Zhang and Yi Wang, “Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique”, Nanoscale Research Letters, vol. 12, Article Number: 223, Published: MAR 24 2017.
(19) Guodong Cui, Dedong Han, Yingying Cong, Junchen Dong, Wen Yu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature”, IEEE Electron Device Letters, vol. 38, no. 2, pp. 207 - 20, 2017.
(20) Hongyu He, Yuan Liu, Binghui Yan, Xinnan Lin, Xueren Zheng, and Shengdong Zhang, “Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States”, IEEE Trans. on Electron Devices, vol. 63, no. 10, pp. 4423 - 4431, 2016.
(21) Letao Zhang, Xiang Xiao, Xiaoliang Zhou, Hongyu He, Xin Xu, Qingping Lin, Hang Zhou, and Shengdong Zhang, “Structure and stoichiometry evolution of sputtered Nb doped TiO2 films induced by O2 pressure variation during post-annealing process” , J. Vac. Sci. Technol. A 34(5), 051512-1(8), Sep/Oct 2016.
(22) Cuicui Wang, Zhijin Hu，Xin He，Congwei Liao，Shengdong Zhang, “One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays”, IEEE Trans. on Electron Devices, vol. 63, no. 9, pp. 3800 - 3803, 2016.
(23) Xiang Liu, Hehe Hu, Ce Ning, Guangliang Shang, Wei Yang, Ke Wang, Xinhong Lu, Woobong Lee, Gang Wang, Jianshe Xue, Jung-mok Jun, Shengdong Zhang, “Investigation into sand mura effects of a-IGZO TFT LCDs,” Microelectronics Reliability, vol. 63, pp.148–151, Aug. 2016.
(24) Yong Le, Yang Shao, Xiang Xiao, Xin Xu and Shengdong Zhang, “Indium–Tin–Oxide Thin-Film Transistors With In Situ Anodized Ta2O5 Passivation Layer”, IEEE Electron Device Letters, vol. 37, no. 5, pp. 603 - 606, 2016.
(25) Wei Deng, Xiang Xiao, Yang Shao, Zhen Song, Chia-Yu Lee, Alan Lien and Shengdong Zhang, “A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes”, IEEE Trans. on Electron Devices, vol. 63, no. 5, pp. 2205 - 2209, 2016.
(26) You Yu, Xiang Xiao, Yaokang Zhang, Kan Li, Casey Yan, Xiaoling Wei, Lina Chen, Hongyu Zhen, Hang Zhou, Shengdong Zhang, Zijian Zheng, “Photo-reactive and metal-platable copolymer inks for high-throughput, room-temperature printing of flexible metal electrodes for thin-film electronics,” Advanced Materials, vol. 28, no. 24, pp. 4926 - 4934, 22 Jun 2016.
(27) Xin Xu, Letao Zhang, Yang Shao, Zheyuan Chen, Yong Le and Shengdong Zhang, “Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Co-sputtering Technique,” IEEE Trans. on Electron Devices, vol. 63, no. 3, pp. 1072 - 1077, 2016.
(28) Yan Wang, Zhonggao Xia, Songnan Du, Fang Yuan, Zigang Li, Zhenjun Li, Qing Dai, Haolan Wang, Shiqiang Luo, Shengdong Zhang and Hang Zhou, “Solution-processed photodetectors based on organic–inorganic hybrid perovskite and nano-crystalline graphite”, Nanotechnology, vol. 27, no. 17, 175201, 2016.
(29) Yingying Cong, Dedong Han, Junchen Dong, Wen Yu, Yi Zhang, Xiaomi Zhang, Guodong Cui, Zhang, X Zhang, Shengdong Zhang, Yi Wang, “High-performance fully transparent Al-Sn-Zn-O thin-film transistors using double-channel structures”, Electronics Letters, vol. 52, no. 12, pp. 1069 – 1070, 9 Jun 2016.
(30) Yingying Cong, Dedong Han, Xiaoliang Zhou, Lingling Huang, Pan Shi, Wen Yu, Yi Zhang, Shengdong Zhang, Xing Zhang, and Yi Wang, “High-Performance Al–Sn–Zn–O Thin-Film Transistor With a Quasi-Double-Channel Structure,” IEEE Electron Device Letters, vol. 37, no. 1, pp. 53 - 56, 2016.
(31) Yi Zhang, Dedong Han, Lingling Huang, Junchen Dong, Yingying Cong, Guodong Cui, Xiaomi Zhang, Xing Zhang, Shengdong Zhang, Yi Wang, “Sn-doped ZnO thin-film transistors with AZO, TZO and Al heterojunction source/drain contact”, Electronics Letters, vol. 52, no. 4, pp. 302 – 304, 18 Feb 2016.
(32) Guodong Cui, Dedong Han, Wen Yu, Pan Shi, Yi Zhang, Lingling Huang, Yingying Cong, Xiaoliang Zhou, Xiaomi Zhang, Shengdong Zhang, “Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate,” Japanese Journal of Applied Physics, Volume 55, Number 4S, 04EK06, 2016.
(33) Wen Yu, Dedong Han, Guodong Cui, Yingying Cong, Junchen Dong, Xiaomi Zhang, Xing Zhang, Yi Wang and Shengdong Zhang, “High-performance calcium-doped zinc oxide thin-film transistors fabricated on glass at low temperature”, Japanese Journal of Applied Physics, Volume 55, Number 4S, 04EK05, 2016.
(34) Huiling Lu, Xiaobin Bi, Shengdong Zhang, Hang Zhou, "Ultraviolet detecting properties of amorphous MgInO thin film phototransistors", Semiconductor Science and Technology, vol. 30, no. 12, 125010, 2015.
(35) Wei Deng, Xiang Xiao, Xin He, Chia-Yu Lee, and Shengdong Zhang, “Comparative Study of a-IGZO TFTs with Direct Current (DC) and Radio Frequency (RF) Sputtered Channel Layers,” Journal of Society of Information Display, vol. 23, issue 7, pp. 306–312, 2015.
(36) Zhijing Hu, Congwei Liao, Wenjie Li, Limei Zeng, Chang-Yeh Lee and Shengdong Zhang, “Integrated a-Si:H Gate Driver with Low-level Holding TFTs Biased under Bipolar Pulses,” IEEE Trans. on Electron Devices, vol. 62, no. 12, pp. 4044 - 4050, 2015.
(37) Zhijing Hu, Lisa Ling Wang, Congwei Liao, Limei Zeng, Chang-Yeh Lee, A. Lien and Shengdong Zhang ‘Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias,” IEEE Trans. on Electron Devices, vol. 62, no. 12, pp. 4037 - 4043, 2015.
(38) Hongyu He, X. Zheng, and Shengdong Zhang, “Above-Threshold 1/f Noise Expression for Amorphous InGaZnO TFTs Considering Series Resistance Noise,” IEEE Electron Device Letters, vol. 36, no. 10, pp.1056 - 1058, 2015.
(39) X. Liu, L. L. Wang, H. Hu, K. Wang, G. Wang, Shengdong Zhang, “Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium–Gallium–Zinc Thin-Film-Transistors by CF4+O2 Plasma Treatment,” IEEE Electron Device Letters, vol. 36, no. 9, pp. 911 - 913, 2015.
(40) Cuicui Wang, Chuanli Leng, Longyan Wang, Wengao Lu, and Shengdong Zhang, “ An Accurate and Fast Current-Biased Voltage-Programmed AMOLED Pixel Circuit with OLED Biased in AC Mode,” IEEE/OSA Journal of Display Technology, vol. 10, no. 7, pp. 412 - 416, 2015.
(41) L. L. Wang, H.Y. He, X. Liu, W. Deng, Shengdong Zhang, “Charge Trapping Model for Temporal Threshold Voltage Shift in a-IGZO TFTs Considering Variations of Carrier Density in Channel and Electric Field in Gate Insulator,” IEEE Trans. on Electron Devices, vol. 62, no. 7, pp. 2219 - 2225, 2015.
(42) Yang Shao, Xiang Xiao, Xin He, Wei Deng, and Shengdong Zhang, “Low Voltage a-InGaZnO Thin-Film Transistors with Anodized Thin HfO2 Gate Dielectric,” IEEE Electron Device Letters, vol. 36, no. 6, pp. 573 - 575, 2015.
(43) Nannan Zhao, Dedong Han, Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang, and Yi Wang, “High Performance Ti-Doped ZnO TFTs With AZO/TZO Heterojunction S/D Contacts,” IEEE/OSA Journal of Display Technology, vol. 10, no. 5, pp. 412 - 416, 2015.
(44) Xiang Xiao, Yang Shao, Xin He, Wei Deng, Letao Zhang and Shengdong Zhang, “Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process,” IEEE Electron Device Letters, vol. 36, no.4, pp. 357 - 359, 2015.
(45) Jianhua Li, Jian Wang, Letao Zhang, and Shengdong Zhang, “Nanocrystalline SnO2 thin films prepared by anodization of sputtered Sn thin films,” J. Vac. Sci. Technol. A 33, 031508 (2015).
(46) Hongyu He, Xueren Zheng and Shengdong Zhang, “1/f Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime,” IEEE Electron Device Letters, vol. 36, no.2, pp. 156 - 158, 2015.
(47) Congwei Liao, Zhijin Hu, D. Dai, S. Chung, T.S. Jen, and Shengdong Zhang, “A Compact Bi-Direction Scannable a-Si:H TFT Gate Driver,” IEEE/OSA Journal of Display Technology, vol. 10, no. 1, pp. 1-3, 2015.
(48) LongYan WANG, Lei SUN, DeDong HAN, Yi WANG, ManSun CHAN, ShengDong ZHANG, “Self-aligned offset gate poly-Si TFTs using photoresist trimming technology,” SCIENCE CHINA Information Sciences, vol. 58, no. 03, 2015.
(49) W Yu, DD Han, P Shi, YY Cong, Y Zhang, JC Dong, XL Zhou, LL Huang, GD Cui, Shengdong Zhang, X Zhang and Y Wang, “Effects of substrate temperature on performance of calcium-doped zinc oxide TFTs,” Electronics Letters, vol. 51, no. 16, pp. 1286–1288, 6 Aug 2015.
(50) Dedong Han, Suoming Zhang, Feilong Zhao, Junchen Dong, Yingying Cong, Shengdong Zhang, Xin Zhang, Yi Wang, “Transparent gallium doped zinc oxide thin-film transistors fabricated on glass substrate,” Thin Solid Films, vol. 594, pp. 266-269, 2015.
(51) L. L. Huang, DD Han, P Shi, YY Cong, Y Zhang, JC Dong, XL Zhou, W Yu, GD Cui, Shengdong Zhang, X Zhang and Y Wang, “High mobility transparent flexible nickel-doped zinc oxide thin-film transistors with small subthreshold swing,” Electronics Letters, vol. 51, no. 16, pp., 20 Aug 2015.
(52) DD Han, FQ Huang, YY Cong, LF Liu, Shengdong Zhang, “Fully transparent flexible dual-layer channel Ga-doped ZnO thin-film transistors on plastic substrates,” Electronics Letters, vol. 51, no. 14, pp. 1069–1070, 9 Jul 2015.
(53) Wu J, Han DD, Cong YY, Zhao NN, Chen ZF, Dong JC, Zhao FL, Shengdong Zhang, Liu LF, Zhang, X, “Effects of channel thickness on characteristics of HZO-TFTs fabricated at low temperature,” Electronics Letters, vol. 51, no. 11, pp. 867–869, 28 May 2015.
(54) Zhuofa Chen, Dedong Han, Jing Wu, Nannan Zhao, Yingying Cong, Feilong Zhao, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang, “Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide,” Japanese Journal of Applied Physics, Vol. 54, no. 4, 04DF03, April 2015.
(55) Yingying Cong, Dedong Han, Jing Wu, Nannan Zhao, Zhuofa Chen, Feilong Zhao, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang, “Studies on fully transparent Al-Sn-Zn-O thin-film transistors fabricated on glass at low temperature,” Japanese Journal of Applied Physics, Vol. 54, no. 4, 04DF01, April 2015.
(56) Lingling Huang, Dedong Han, Zhuofa Chen, Yingying Cong, Jing Wu, Nannan Zhao, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, “Flexible nickel-doped zinc oxide thin-film transistors fabricated on plastic substrates at low temperature,” Japanese Journal of Applied Physics, Vol. 54, no. 4, 04DJ07, April 2015.
(57) Yi-Bo Zhang, Lei Sun, Hao Xu, Jing-Wen Han, Yi Wang, Shengdong Zhang, “Comparative study of silicon nanowire transistors with triangular-shaped cross sections,” Japanese Journal of Applied Physics, Vol. 54, no. 4, 04DN01, April 2015.
(58) Hao Xu, Lei Sun, Yi-Bo Zhang, Jing-Wen Han, Yi Wang, Shengdong Zhang, “New concept of planar germanium MOSFET with stacked germanide layers at source/drain,” Japanese Journal of Applied Physics, Vol. 54, no. 4, 04DC13, April 2015.
(59) Jing-Wen Han, Lei Sun, Hao Xu, Yi-Bo Zhang, Yi Wang, Shengdong Zhang, “Impact of Gate Coupling and Misalignment on Performance of Double-gate Organic Thin Film Transistors,” Japanese Journal of Applied Physics, Vol. 54, no. 4, 04DK04, April 2015.
(60) Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Junchen Dong, Feilong Zhao, Lingling Huang, Yi Zhang, Guodong Cui, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “Performance enhancement of fully transparent tin-doped zinc oxide thin-film transistors fabricated by sputtering at low temperature,” Electronics Letters, vol. 51, no. 3, pp. 272 – 274, 23 Jan 2015.
(61) Yan Wang, Zhonggao Xia, Jun Liang, Xinwei Wang, Yiming Liu, Chuan Liu, Shengdong Zhang, Hang Zhou, “Towards printed perovskite solar cells with cuprous oxide hole transporting layers: a theoretical design,” Semiconductor Science and Technology, vol. 30, no.5, pp. May 2015.
(62) Liang Jun, Su YanTao, Lin Qinxian, Zhou Hang, Shengdong Zhang, Pei Yanli, Hu RuiQin, “Forming-free resistive switching memory based on LiFePO4 nano-particle embedded in conjugated polymer,” Semiconductor Science and Technology, 29(11), 2014/11.
(63) X. Liu, L. L. Wang, C. Ning, H. Hu, W. Yang, K. Wang S. Y. Yoo, and Shengdong Zhang, “Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate,” IEEE Trans. on Electron Devices, vol. 61, no. 12, pp. 4299 -4304, 2014.
(64) X. He, X. Xiao, Y. Shao, W. Deng, C. Leng, and Shengdong Zhang, “A Multi-Vt a-IGZO TFT Technology Using Anodization to Selectively Reduce Oxygen Vacancy Concentration in Channel Regions,” IEEE Electron Device Letters, vol. 35, no.12, pp. 1248 - 1250, 2014.
(65) X. He, L. Wang, X. Xiao, W. Deng, L. Zhang, M. Chan, and Shengdong Zhang, “Implementation of Fully Self-Aligned Homojunction Double-Gate a-IGZO TFTs,” IEEE Electron Device Letters, vol. 35, no.9, pp. 927 - 929, 2014.
(66) C. L. Leng, C. C. Wang, L. Y. Wang and Shengdong Zhang, “Separate Frame Compensated Current-Biased Voltage-Programmed Active Matrix Organic Light-Emitting Diode Pixel,” IEEE Electron Device Letters, vol. 35, no.8, pp. 847 - 849, 2014.
(67) Yang Shao, Xiang Xiao, Longyan Wang, Yang Liu and Shengdong Zhang, “Anodized ITO Thin Film Transistors,” Advanced Functional Materials, vol. 24, issues 26, July 9, pp.4170–4175, 2014.
(68) Lisa Ling Wang, Tony Chi Liu, Yuying Cai, and Shengdong Zhang, “Thin-Film Transistor Vth Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric”, IEEE Trans. on Electron Devices, vol. 61, no. 05, pp.1436 -1443, 2014.
(69) L. Y. Wang, L. Sun, D. D. Han, Y. Wang, M. Chan, and Shengdong Zhang, “A Hybrid a-Si and poly-Si TFTs Technology for AMOLED Pixel Circuits”, IEEE/OSA Journal of Display Technology, vol.10, no. 4, pp. 317-320, 2014.
(70) Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Lingling Huang, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures,” Electronics Letters, vol. 50, no. 20, p. 1463-1464, 25 Sept. 2014.
(71) Zhuofa Chen, Dedong Han, Nannan Zhao, Yingying Cong, Jing Wu, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance Dual-layer Channel ITO/TZO TFTs Fabricated on Glass Substrate”, Electronics Letters, vol. 50, no. 8, pp. 633 – 635, 10 April 2014.
(72) Dongfang Shan, Dedong Han, Fuqing Huang, Yu Tian, Suoming Zhang, Lin Qi, Yingying Cong, Shengdong Zhang, Xing Zhang, and Yi Wang, “Fabrication and Characteristics of High-performance and High-stability Aluminum-doped Zinc oxide Thin-Film Transistors,” Jpn. J. Appl. Phys. 53 04EJ07, 2014.
(73) Yu Tian, Dedong Han, Suoming Zhang, Fuqing Huang, Dongfang Shan, Yingying Cong, Jian Cai, Liangliang Wang, Shengdong Zhang, Xing Zhang, “High-performance Dual-layer Channel Indium Gallium Zinc Oxide Thin-film Transistors Fabricated in Fifferent Oxygen Contents at Low Temperature,” Jpn. J. Appl. Phys. 53 04EF07, 2014.
(74) Yi-Bo Zhang, Lei Sun, Hao Xu, Yu-Qian Xia, Yi Wang, Shengdong Zhang, “Comparative Study of Dopant-segregated Schottky Barrier Germanium Nanowire Transistors,” Jpn. J. Appl. Phys. 53 04EN03, 2014.
(75) Y. Q. Xia, Lei Sun, Hao Xu, Jing-Wen Han, Yi-Bo, Zhang, Yi Wang, and Shengdong Zhang, “Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates,” Chinese Physics Letters, Vol.31, 027501: 1-4, no.2, 2014.
(76) Liu Xiang, Zhang Shengdong, Xue Jianshe, Ning Ce, Yang Jing, WangGang “Improvement of Indium Gallium Zinc Oxide Thin Film Transistor with Etch-Stop Layer of Bottom-Gate,” Chinese Journal of Vacuum Science and Technology. Vol.34, no. 2, pp.130-133, 2014.
(77) X. Xiao, W. Deng, S. Chi, Y. Shao, X. He, L. Wang, and Shengdong Zhang, “Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs,” IEEE Trans. on Electron Devices, vol.60, no. 12, pp. 4159 - 4164, 2013.
(78) C. L. Leng, L. Y. Wang and Shengdong Zhang, “Two-Transistor Current-Biased Voltage-Programmed AM-OLED Pixel,” IEEE Electron Device Letters, Vol.34, no.10, pp. 1262 - 1264, 2013.
(79) X. Xiao, W. Deng, X. He, and Shengdong Zhang, “a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric,” IEEE Trans. on Electron Devices, vol.60, no. 8, pp.2687 - 2690, 2013.
(80) J. Cai, D. Han, Y. Geng, W. Wang, L. Wang, Shengdong Zhang, Y. Wang, “High-Performance Transparent AZO TFTs Fabricated on Glass Substrate,” IEEE Trans. on Electron Devices, vol.60, no. 7, pp. 2432 - 2435, 2013.
(81) Dedong Han, Wei Wang, Jian Cai, Liangliang Wang, Yicheng Ren, Yi Wang and Shengdong, Zhang,“ Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature,” Journal of Nanoscience and Nanotechnology, vol. 13, no. 7, pp. 5154-5157, July 2013.
(82) J. K. Yao, L. Gong, L. Xie, and Shengdong Zhang, “Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films,” Thin Solid Films, vol.527, pp.21-25, 2013.
(83) W. Wang, D. Han, J. Cai, Y. Geng, L. Wang, L. Wang, Y. Tian, X. Zhang, Y. Wang and Shengdong Zhang, “Fully Transparent Al-Doped ZnO Thin-Film Transistors on Flexible Plastic Substrates,” Jpn. J. Appl. Phys. 52 (2013) 04CF10.
(84) J. Cai, D. Han, Y. Geng, W. Wang, L. Wang, Y. Tian, L. Qian, X. Zhang and Shengdong Zhang, and Yi Wang,” Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics,” Jpn. J. Appl. Phys. Vol.52, 04CF11, 2013.
(85) L. L. Wang, J. B. Kuo, Shengdong Zhang, “Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary,” IEEE Trans. on Electron Devices, vol.60, no. 3, pp. 1122-1127, 2013.
(86) Congwei Liao, Changde He, Tao Chen, T.S. Jan and Shengdong Zhang, “Design of Integrated Amorphous-Silicon Thin-Film Transistor Gate Driver,” IEEE/OSA Journal of Display Technology, vol.9, no. 1, pp.7-16, 2013.
(87) Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yi Wang, Lifeng Liu, and Shengdong Zhang, “High performance aluminum-doped ZnO thin film transistors with high-K gate dielectrics fabricated at low temperature,” Sensor Letters, vol. 11, no. 8, pp.1509-1512, Aug. 2013
(88) T. C. Liu, J. B. Kuo, and Shengdong Zhang, “A Closed-Form Analytical Transient Response Model for On-Chip Distortionless Interconnect,” IEEE Trans. on Electron Devices, vol.59, no. 12, pp. 3186-3192, 2012.
(89) Jianke Yao, Shengdong Zhang, and Li Gong, “Band offsets in ZrO2/InGaZnO4 heterojunction,” Appl. Phys. Lett. 101, 093508 (2012).
(90) S. Li, Y. Cai, D. Han, Y. Wang, L. Sun, M. Chan, and Shengdong Zhang, “Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc Target,” IEEE Trans. on Electron Devices, vol.59, pp. 2555-2558, no. 9, 2012.
(91) Congwei Liao, Changde He, Tao Chen, T.S.Jan and Shengdong Zhang, “Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach,” IEEE Trans. on Electron Devices, vol.59, pp. 2142-2148, no. 8, 2012.
(92) T. C. Liu, J. B. Kuo and Shengdong Zhang, “Floating-Body Kink-Effect-Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT”, IEEE Electron Device Letters, Vol.33, no.6, pp. 842 – 844, Jun.2012.
(93) Li, SJ, He, X , Han, DD, Sun, L, Wang, Y, Han, RQ, Chan, MS, and Shengdong Zhang, “Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors”, Chinese Physics Letters, Vol.29, no.1, 2012.
(94) Han DeDong, Wang Yi, Shengdong Zhang, Sun Lei, Han RuQi, Satoru Matsumoto, and Yuji Ino, “Fabrication and characteristics of ZnO thin films deposited by RF sputtering on plastic substrates for flexible display”, Science China F, 2012, 55(6), p1441-1445.
(95) Han D. D., Wang Y., Shengdong Zhang, Sun L., Han R.Q., Matsumoto S., Ino Y., “Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature”. Science China F, 2012, 55(4): 951-955.
(96) Dapeng Zhou, Mingxiang Wang, Shengdong Zhang, "Degradation of Amorphous Silicon Thin Film Transistors Under Negative Gate Bias Stress", IEEE Trans. on Electron Devices, vol.58, no. 10, pp. 3422-3427, Oct. 2011.
(97) Wei Liu, Wei Li, Peng Ren, Chinglong Lin, Shengdong Zhang* and Yangyuan Wang, “A PVT Tolerant 10 to 500 MHz All-Digital Phase-Locked Loop with Coupled TDC and DCO”, IEEE Journal of Solid-State Circuits, vol.45, pp314-321, no.2, 2010.
(98) Wei Liu, Wei Li, Peng Ren, Qinglong Lin, Shengdong Zhang* and Yangyuan Wang, “An 11-Bit and 39 ps Resolution Time-to-Digital Converter for ADPLL in Digital Television,” International Journal of Electronics, vol 97, Issue 4, pp 381-388, 2010.
(99) Han D.D., Wang Y., Shengdong Zhang, Sun L., Kang J.F., Liu X.Y., Du.G., Liu L.F., Han R.Q., “Fabrication and characteristics of ZnO Zhang MOS capacitors with high-K HfO2 gate dielectrics”. Science China-Technological Sciences, 2010. 53(9): p.2333.
(100) Wei Liu, Wei Li, Peng Ren, Qinglong Lin, Shengdong Zhang* and Yangyuan Wang, “A time-domain digitally controlled oscillator composed of a free running ring oscillator and flying-adder”, Chinese journal of Semiconductor, vol. 30, no.9, 2009.
(101) Wei Ke, Xu Han, Dingyu Li, X. Wang, T. Zhang, R. Han and Shengdong Zhang*, “Recessed source/drain for Sub-50 nm UTB SOI MOSFET”, Semiconductor Science and Technology, vol. 22, no. 5, pp.577 -583, 2007.
(102) DY Li, L Sun, Shengdong Zhang, et al.“Schottky barrier MOSFET structure with silicide source/drain on buried metal” CHINESE PHYSICS 16 (1): 240-244 JAN 2007.
(103) Wei Ke, Xu Han, B. Xu, X. Liu, X. Wang, T. Zhang, R. Han and Shengdong Zhang*, “Source/drain series resistances of nanoscale ultra-thin-body SOI MOSFETs with undoped or very-low-doped channel regions”, Semiconductor Science and Technology, vol. 21, no. 10, pp.1416-1421, 2006.
(104) L. Sun , D. Y. Li, Shengdong Zhang, X. Y. Liu, Y. Wang and R. Q. Han, “A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs”, Semiconductor Science and Technology, vol. 21, no. 5, pp.608-611, 2006.
(105) X. Lin, Shengdong Zhang*, X. Wu and M. Chan, “Local Clustering 3-D Stacked CMOS Technology for Interconnect Loading Reduction”, IEEE Trans. on Electron Devices, vol.53, pp. 1405-1410, no. 6, 2006.
(106) X. Wu, P. C. H. Chan, Shengdong Zhang C. Feng, and M. Chan, “A Three-Dimensional Stacked Fin-CMOS Technology for High-Density ULSI Circuits”, IEEE Trans. on Electron Devices, vol.52, pp. 1998-2003, no. 9, 2005.
(107) X. Wu, P. C. H. Chan, Shengdong Zhang, C. Feng, and M. Chan, "Stacked 3-D Fin-CMOS Technology" , IEEE Electron Device Letters, Vol. 26, No. 6, pp. 416-418, June 2005.
(108) X. Lin, C. Feng, Shengdong Zhang, W.-H. Ho and M. Chan, "Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film", Solid-State Electronics, Vol. 48, No. 12, pp. 2315-2319, December 2004.
(109) Z. Zhang, Shengdong Zhang* and M. Chan,“Self-Align Recessed Source Drain Ultra-thin Body SOI MOSFET” IEEE Electron Device Letters, Vol. 25, No. 11, pp. 740 – 742, 2004.
(110) Shengdong Zhang, Ruqi Han, X. Lin, X. Wu, and M. Chan, "A Stacked CMOS Technology on SOI Substrate", IEEE Electron Device Letters, Vol. 25, No. 9, pp. 661-663, 2004.
(111) Z. Zhang, Shengdong Zhang, C. Feng, M. Chan, “Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs”, IEEE Trans. on Electron Devices, vol.51, pp. 1095-1100, no. 7, 2004.
(112) Shengdong Zhang, Ruqi Han, and Mansun Chan,“A Self-Aligned gate-all-Around MOS transistor on Single Grain Silicon，” Electrochemical and Solid-State Letters，vol. 7, no. 4, pp. G59-G61, 2004.
(113) Zhikuan Zhang, Shengdong Zhang, Chuguang Feng and Mansun Chan, “An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs” Solid-State Electronics, vol. 47, no. 10, pp. 1829-1833, 2003.
(114) Shengdong Zhang, Ruqi Han, Xinnan Lin and Mansun Chan, “An Electrically separable self-aligned double-gate MOS for dynamic threshold voltage application”, IEEE Transactions on Electron Devices, vol.50, no.11, pp. 2297-2300, 2003.
(115) Shengdong Zhang, Allain Chan, Ruqi Han, and Mansun Chan, “A Viable Self-Aligned Bottom-Gate MOS Transistor Technology for Deep Sub-Micron 3-D SRAM,” IEEE Trans. on Electron Devices, vol.50, pp. 1952-1960, no. 9, 2003.
(116) Shengdong Zhang, Ruqi Han, Zhikuan Zhang, Ru Huang, Ping K. Ko, and Mansun Chan, "Implementation of Fully Self-aligned Bottom-gate MOS Transistor", IEEE Electron Device Letters, vol. 23, no. 10, 2002, pp. 618-620.
(117) Shengdong Zhang, Ruqi Han, Johnny K.O. Sin and Mansun Chan, “Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD,” IEEE Trans. on Electron Devices, August 2002, vol. 49, no. 8, pp. 1490-1492.
(118) S. Jagar, C. F. Cheng, Shengdong. Zhang, H. Wang, M. C. Poon, C. W. Kok, and M. Chan, "A SPICE Model for Thin-Film Transistors Fabricated on Grain-Enhanced Polysilicon Film", IEEE Trans. on Electron Devices, Vol. 50, No. 4, pp. 1103-1108, April 2003.
(119) Shengdong Zhang, R. Han, J. K. O. Sin, and M. Chan, "Implementation and Characterization of Self-Aligned Double-Gate TFT with Thin Channel and Thick Source/Drain", IEEE Trans. on Electron Devices, May 2002, Vol. 49, No. 5, pp. 718-724.
(120) Shengdong Zhang, Ruqi Han, Mansun Chan, “A Novel Self-Aligned Double Gate TFT Technology,” IEEE Electron Device Letters, vol.22, no.11, June 2001 pp.530-532.
(121) Shengdong Zhang, Ruqi Han, Mansun Chan, “A Novel Self-Aligned Bottom Gate TFT with in situ LDD”, IEEE Electron Device Letters, vol.22, no.8, June 2001 pp.393-395.
(122) Shengdong Zhang, Chunxiang Zhu, Sin JKO, Li JN and Mok PKT, “Ultra-thin elevated channel poly-Si TFT technology for fully-integrated AMLCD system on glass”, IEEE Trans. on Electron Devices, vol.47, no.3, March 2000, pp.569-75.
(123) Shengdong Zhang, Chunxiang Zhu, Sin JKO and Mok PKT, “A novel ultrathin elevated channel low-temperature poly-Si TFT”, IEEE Electron Device Letters, vol.20, no.11, Nov. 1999, pp.569-71.
(124) Shengdong Zhang, Sin JKO, Lai TML and Ko PK, “Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices”, IEEE Trans. on Electron Devices, vol.46, no.5, 1999, pp.1036-41.
(125) Shengdong Zhang, Sin JKO, “A novel self-aligned bidirectional MIM diode with transparent junctions for AM-LCD's”, IEEE Electron Device Letters, vol.19, no.6, June 1998, pp.192-4.
Conference Papers
1) Ruibin Xie, Qiang Zhao, Yihua Ma, Fengbo Xie, Feng Lin, Shengdong Zhang, “A Power-On-Reset Circuit with Precisely Triggered Threshold Voltages”, The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), October 18-20, 2017, Hsinchu, Taiwan.
2) Qingping Lin, Baozhu Chang, Letao Zhang, Xiaoliang Zhou, Hongyu He, Shengdong Zhang,“TiO2:Nb film thickness influences on the amorphous InGaZnO thin film transistors with Mo/TiO2:Nb source-drain electrodes,” The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), October 18-20, 2017, Hsinchu, Taiwan.
3) Yang Shao, Xiaoliang Zhou, Qingping Lin, Letao Zhang, Huiling Lu, Shengdong Zhang, “ZnSnO Thin-Film Transistors by Reactive Co-Sputtering of Zn and Sn Metal Targets”, The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), October 18-20, 2017, Hsinchu, Taiwan.
4) Qiang Zhao, Ruibin Xie, Yihua Ma, Fengbo Xie, Feng Lin, Shengdong Zhang, "A 27.6MHz 297uW 33 ppm/℃ CMOS Relaxation Oscillator With An Adjustable Temperature Compensation Scheme", The 13th IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2017), October 18-20, 2017, Hsinchu, Taiwan.
5) Congwei Liao, Yihua Ma, Xiaodi Liu, Xiang Liu, Shengdong Zhang, “Robust Gate Driver Design with Etching-Stop-Layer Type InGaZnO TFTs Using Stack Buffer Structure”, SID Symposium Digest of Technical Papers, pp.1331 – 1334, May 21–26, 2017, Los Angeles, California, USA.
6) Yihua Ma, Congwei Liao, Ruibin Xie, Qiang Zhao and Shengdong Zhang, “A Low-Power and High-Stable TFT Gate Driver With a Novel Bootstrap Scheme”, SID Symposium Digest of Technical Papers, pp.72 – 75, May 21–26, 2017, Los Angeles, California, USA.
7) Huiling Lu, Letao Zhang, Xiaoliang Zhou, Hang Zhou and Shengdong Zhang, “Photocurrent Characteristics of Amorphous MgInO Thin Film Transistors”, SID Symposium Digest of Technical Papers, pp.1254 – 1257, May 21–26, 2017, Los Angeles, California, USA.
8) Xiaoliang Zhou, Gang Wang, Yang Shao, Letao Zhang, Huiling Lu, Shuming Chen, Dedong Han, Yi Wang and Shengdong Zhang, “Parylene / Al2O3 Double Layer Passivated Amorphous InGaZnO Thin-Film Transistors”, SID Symposium Digest of Technical Papers, pp.1258–1261, May 21–26, 2017, Los Angeles, California, USA.
9) Wen Yu, Dedong Han, Junchen Dong, Yingying Cong, Shengdong Zhang, Xing Zhang and Yi Wang, “Effects of Calcium Doping on Zinc Oxide Thin Film Transistors”, SID Symposium Digest of Technical Papers, pp.1265 – 1268, May 21–26, 2017, Los Angeles, California, USA.
10) Ting Liang, Xiaodong Zhang, Xiaoliang Zhou, Letao Zhang, Huiling Lu, Hongjuan Lu and Shengdong Zhang, “Effects of N2O Plasma Treatment Time on the Performance of Self-Aligned Top-Gate amorphous oxide Thin Film Transistors”, SID Symposium Digest of Technical Papers, pp.1299 – 1302, May 21–26, 2017, Los Angeles, California, USA.
11) Hongjuan Lu, Letao Zhang, Xiaoliang Zhou, Xiaodong Zhang, Ting Liang and Shengdong Zhang, “The Effect of Thermal Annealing Sequence on the Performance of Self-Aligned Top-Gate a-IGZO TFTs”, SID Symposium Digest of Technical Papers, pp.1303 – 1306, May 21–26, 2017, Los Angeles, California, USA.
12) Cuicui Wang, Hing-Mo Lam, Xiaolong He, Wengao Lu and Shengdong Zhang, “A High-Voltage Analog Adder Based on Class-B Amplifier for Source Driver of AMOLED External Compensation Scheme”, SID Symposium Digest of Technical Papers, pp.1442 – 1445, May 21–26, 2017, Los Angeles, California, USA.
13) Yizhe Sun, Huiren Peng, Shuming Chen and Shengdong Zhang, “Inverted Quantum Dot Light-Emitting Diodes with MgZnO Modified Electron Transport Layer”, SID Symposium Digest of Technical Papers, pp.1699 – 1702, May 21–26, 2017, Los Angeles, California, USA.
14) Huiling Lu, Ting Liang, Shengdong Zhang，“High reliability of IGZO TFTs using low-temperature fabricated organic passivation layers”，2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)，pp.638-640, October 25-28, 2016, Hangzhou, China
15) Yukun Yang, Dedong Han, Guodong Cui, Wen Yu, Huijin Li, Junchen Dong, Xing Zhang, Yi Wang, Shengdong Zhang，"Characteristic research of zinc oxide based thin film transistor by ALD technology", 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)，pp.1143-1145, October 25-28, 2016, Hangzhou, China
16) Fangfang Yang，Cuicui Wang，Hing-Mo Lam，Qiang Zhao，Jia Fan, and Shengdong Zhang，“A floating high-voltage level shifter used in a floating high-voltage level shifter used in a pre-charge circuit for large-size AMOLED displays, ” EDSSC, 2016/8/3-2016/8/5, Hong Kong.
17) Shengdong Zhang (invited), Yang Shao, Xiaoliang Zhou, Xiang Xiao, “Oxide Thin-Film Transistors with In Situ Anodized Passivation Layers”, The 16th International Meeting on Information Display (IMID), August 23-26, 2016/ICC Jeju, Korea.
18) Hongjuan Lu, Chongyang Ren, Xiang Xiao, Yuxiang Xiao, Cuicui Wang and Shengdong Zhang, “Comparison of N2 and Ar plasma treatment for source/drain formation in self-aligned top-gate amorphous InGaZnO thin film transistor,” AM-FPD’16, July 6-8, 2016, Kyoto, Japan.
19) Man Zhang, Xiang Xiao, Xin Ju, Xiaodong Zhang and Shengdong Zhang, “Characteristics of amorphous In-Ga-Zn-O thin-film-transistors with channel layer deposited by bias sputtering,” AM-FPD ’16, July 6-8, 2016, Kyoto, Japan.
20) Cuicui Wang, Xue Meng, Hing-Mo Lam, Hongjuan Lu and Shengdong Zhang, “A new AC biased pixel circuit for active matrix organic light-emitting diode displays,” AM-FPD’16, July 6-8 2016, Kyoto, Japan.
21) Chongyang Ren, Hongjuan Lu, Xiang Xiao, Wei Deng, Yuxiang Xiao and Shengdong Zhang，“Impact of Wet Etchant with Different PH Value on the Performance of Back-Channel-Etch a-IGZO Thin-Film-Transistor”，AMFPD’16 July 6-8，Kyoto，Japan.
22) Yuxiang Xiao, Xiang Xiao, Letao Zhang, Xin Ju, Hongjuan Lu and Shengdong Zhang, “Oxygen Partial Pressure and Annealing Temperature Influence on the Performance of Back-Channel-Etch Zinc Tin Oxide Thin Film Transistors,” AMFPD’16, July 6-8, 2016, Kyoto, Japan.
23) Xin Ju, Xiang Xiao, Yuxiang Xiao, Man Zhang, and Shengdong Zhang, “Estimation of Threshold Voltage Shift in a-IGZO TFTs under Different Bias Temperature Stress by Improved Stretched-Exponential Equation,” AMFPD’16, July 6-8, 2016, Kyoto, Japan.
24) Pan Shi, Dedong Han,Wen Yu, Zhuofa Chen, Nannan Zhao, Feilong Zhao, Shengdong Zhang, Xing Zhang, “The Research of Dual-Layer Channel ITO/MZO Thin Film Transistors,” SID’16, May 21-27, 2016, San Francisco, USA.
25) Zhijin Hu, Cuicui Wang, Congwei Liao, Shijie Cao, Jia Fan, Qiang Zhao and Shengdong Zhang, “TFT Integrated Gate Driver with VTH Shift Compensable Low-Level Holding Unit”, SID Symposium Digest of Technical Papers, pp.134 - 137, May 22–28, 2016, San Francisco, California, USA.
26) Tianyu Zhou, Chuanli Leng, Hing-Mo Lam, Hesheng Lin, Shengdong Zhang and Min Zhang, “An Area-Efficient Segmented R-DAC Realized by Low-Voltage Transistors for AMOLED Driver ICs”, SID Symposium Digest of Technical Papers, pp.1257 - 1260, May 22–28, 2016, San Francisco, California, USA.
27) Cuicui Wang, Chuanli Leng, Hing-Mo Lam, Zhijin Hu, Congwei Liao, Xue Meng, Jia Fan, Tianyu Zhou, Fangfang Yang and Shengdong Zhang, “A Peripheral Compensation Scheme for AMOLED with Data Voltage, VTH and Aging Information Analogously Added in Pixel Circuit”, SID Symposium Digest of Technical Papers, pp.1250 - 1253, May 22–28, 2016, San Francisco, California, USA.
28) Zhen Song, Guoying Wang, Xiang Xiao, Wei Deng and Shengdong Zhang, “AZO Etch Buffer Layer based Back-Channel-Etch a-IGZO TFT Technology”, SID Symposium Digest of Technical Papers, pp.1172 - 1175, May 22–28, 2016, San Francisco, California, USA.
29) Xue Meng, Cuicui Wang, Chuanli Leng, Hing-Mo Lam, Yuan-chun Wu, Min Zhang and Shengdong Zhang, “A Current Source Free Separate Frame Compensated Voltage-Programmed Active Matrix Organic Light Emitting Diode Pixel Circuit”, SID Symposium Digest of Technical Papers, pp.1282 - 1285, May 22–28, 2016, San Francisco, California, USA.
30) Shijie Cao, Zhijin Hu, Congwei Liao, Cuicui Wang, Jia Fan, Min Zhang and Shengdong Zhang, “A Low-Power ESL a-IZGO TFT Integrated Gate Driver Circuit”, SID Symposium Digest of Technical Papers, pp.1272 - 1275, May 22–28, 2016, San Francisco, California, USA.
31) Jia Fan, Cuicui Wang, Hing-Mo Lam, Congwei Liao, Fangfang Yang, Min Zhang and Shengdong Zhang, “A High Accuracy Current Comparison Scheme for External Compensation Circuit of AMOLED Displays”, SID Symposium Digest of Technical Papers, pp.1261-1264, May 22–28, 2016, San Francisco, California, USA.
32) Dedong Han, Suoming Zhang, Jing Wu, Yingying Cong, Lingling Huang, Yi Zhang, Pan Shi, Wen Yu, Shengdong Zhang, Xing Zhang and Yi Wang, “Effects of the Channel Thickness on Characteristics of Ga-Doped Zinc Oxide Thin-Film Transistors Fabricated on Glass,” SID Symposium Digest of Technical Papers, Special Issue: Proceedings: EuroDisplay 2015, Volume 46, Issue S1, page 87, September 2015.
33) Hsiang-chih Hsiao, Zhi-xiong Jiang , Chang-yi Su, Hong-yuan Xu, Mian Zeng, Bo Sun, Chia-yu Lee, Hang Zhou, and Shengdong Zhang, “Solution Processed P-type Top-gate Small-Molecular Organic TFT,” International Display Workshops (IDW) 2015.
34) Shengdong Zhang, Yang Shao, Xiang Xiao and Xin He, “Anodized Oxide TFT Technology,” IDMC’15, August 25-28, 2015, TWTC Nangang, Taiwan. (invited)
35) Guoying Wang, Zhen Song, Xiang Xiao and Shengdong Zhang, “Effects of Over-Etching Time on the Characteristics of Amorphous IGZO Thin-Film Transistors with Back-Channel-Etch Structure,” AM-FPD Symposium Digest of Technical Papers, pp.107-110, July1-3, 2015, Kyoto, Japan.
36) Pan Shi, Dedong Han, Yi Zhang, Wen Yu, Lingling Huang, Yingying Cong,Xiaoliang Zhou, Zhuofa Chen, Junchen Dong, Shengdong Zhang, Xing Zhang, and Yi Wang,” Fully-transparent Mo-doped ZnO TFTs Fabricated in Different Oxygen Partial Pressure at Low Temperature,” AM-FPD Symposium Digest of Technical Papers, pp.111-114,July 1-4,2015, Kyoto, Japan.
37) Xin He, Ling Wang, Wei Deng, Xiang Xiao, Letao Zhang, Chuanli Leng, Mansun Chan, and Shengdong Zhang, “Improved Electrical Stability of Double-Gate a-IGZO TFTs,” SID Symposium Digest of Technical Papers, pp.1151-1155, June 2–5, 2015, San Jose, California, USA.
38) Congwei Liao, Zhijin Hu, Junmei Li, Wenjie Li, Shijie Cao, and Shengdong Zhang, “A Simple Low Temperature Workable a-Si:H TFT Integrated Gate Driver on Array,” SID Symposium Digest of Technical Papers, pp.1316-1320, June 2–5, 2015, San Jose, California, USA.
39) Chuanli Leng, Xin He, Hing-Mo Lam, Xue Meng, Cuicui Wang, Yuan-chun Wu, Kai-Yuan Ko, and Shengdong Zhang, “Row-Division Driving Scheme for Active Matrix OLED Displays,” SID Symposium Digest of Technical Papers, pp.1308-1312, June 2–5, 2015, San Jose, California, USA.
40) Pan Shi, Dedong Han, Wen Yu, Zhuofa Chen, Nannan Zhao, Feilong Zhao, Jing Wu, Junchen Dong, Yingying Cong, Lingling Huang, Yi Zhang, Shengdong Zhang, Xing Zhang and Yi Wang, “The Research of Dual-Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature,” SID Symposium Digest of Technical Papers, pp.1176-1180, June 2–5, 2015, San Jose, California, USA.
41) Nannan Zhao Dedong Han, Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang, Yi Wang, “High-performance fully transparent Ti-Zn-O thin film transistors,” VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on, pp. 1 – 2, 27-29 April 2015, Hsinchu, Taiwan.
42) W. Liu, P. Jin, Shengdong Zhang, “Reactive wetting and dewetting of liquid SnPb solder on the butterfly pattern,” 15th International Conference on Electronic Packaging Technology (ICEPT), pp.159-62, 12-15 Aug. 2014 Chengdu China.
43) W. Liu, P. Jin, Shengdong Zhang, “Reactive spreading and dewetting of liquid SnPb solder on Cu thin films,” 15th International Conference on Electronic Packaging Technology (ICEPT), pp.1442-5, 12-15 Aug. 2014 Chengdu China.
44) Wen Yu, Lisa Ling Wang, Xiang Xiao, Wenjie Li, and Shengdong Zhang, “The Influence of Temperature on Dynamic Gate-bias Stress Instability in Amorphous Silicon Thin Film Transistors,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October 28-31, pp.1492-1494, 2014, Guilin, China
45) Xiang Xiao, Lei Xie, Yang Shao, Xin He, Peng Zhang, Weizhi Meng, Zheyuan Chen, Wei Deng, Letao Zhang, and Shengdong Zhang, “Impacts of substrate heating schemes on characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs fabricated on flexible substrates,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct 28-31, pp. 1495-1497, 2014, Guilin, China.
46) Zheyuan Chen, Xiang Xiao, Yang Shao, Weizhi Meng, Shuguang Zhang, Lunlun Yue, Lei Xie, Peng Zhang, Huiling Lu, and Shengdong Zhang，“Fabrication of P-type Copper Oxide Thin-Film Transistors at Different Oxygen Partial Pressure,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct 28-31, pp.1501-1503, 2014, Guilin, China.
47) Wei Deng, Xin He, Xiang Xiao, Ling Wang, Weizhi Meng and Shengdong Zhang, “ a-IGZO thin film transistors with channel layer deposited at room temperature and 250℃,” 2014 IEEE 12th international conference on solid-state and integrated circuit technology (ICSICT) , Oct.28-31, pp.1057-1059, 2014, Guilin, China.
48) Xin He, Xiang Xiao, Wei Deng, Longyan Wang, Ling Wang, Shipeng Chi, Yang Shao, Mansun Chan and Shengdong Zhang, ” Characteristics of Double-Gate a-IGZO TFTs, ” 2014 IEEE 12th international conference on solid-state and integrated circuit technology (ICSICT) , Oct.28-31, pp.648-650, 2014, Guilin, China.
49) Wenjie Li, Congwei Liao, Xiang Xiao, Zhijin Hu, Junmei Li, and Shengdong Zhang, “Lifetime prediction of TFT integrated gate drivers,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct.28-31, pp.1498-1450, 2014, Guilin, China.
50) Nannan Zhao, Dedong Han, Zhuofa Chen, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang,Yi Wang, “Effects of radio frequency power on properties of titanium-doped zinc oxide based TFTs,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Oct.28-31, pp.1498-1450, 2014, Guilin, China.
51) Hao Xu, Lei Sun, Yi-Bo Zhang, Jing-Wen Han, Yi Wang and Shengdong Zhang, “Performance investigation of p-type Ge- and Ge-Core/Si-Shell junctionless nanowire transistors,” 2014 IEEE 12th international conference on solid-state and integrated circuit technology (ICSICT) , Oct.28-31, pp.1-3, 2014, Guilin, China.
52) Hao Xu, Lei Sun, Yi-Bo Zhang, Yu-Qian Xia, Jing-Wen Han, Yi Wang and Shengdong Zhang, “DC and Analog/RF investigation on Germanium MOSFET with double-Schottky-barrier source/drain,” 2014 IEEE 12th international conference on solid-state and integrated circuit technology (ICSICT) , Oct.28-31, pp.1-3, 2014, Guilin, China.
53) Jing-Wen Han, Lei Sun, Hao Xu, Yi-Bo Zhang, Shengdong Zhang and Yi Wang, “PERFORMANCE AND MICROSTRUCTUREANALYSIS OF VACUUM ANNEALED ZnO THIN-FILM TRANSISTORS,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October 28-31, pp.1504-1506, 2014, Guilin, China.
54) Jing-Wen Han, Lei Sun, Hao Xu, Yi-Bo Zhang, Shengdong Zhang and Yi Wang, “IMPACT OF GATE COUPLING AND MISALIGNMENT ON PERFORMANCE OF DOUBLE-GATE ORGANIC THIN FILM TRANSISTORS,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October 28-31, pp.1778-1780, 2014, Guilin, China.
55) Feilong Zhao, Dedong Han, Junchen Dong, Longyan Wang, Nannan Zhao, Jing Wu, Yingying Cong, Zhuofa Chen, Xing Zhang, Shengdong Zhang, and Yi Wang, “HIGHLY RELIABLE AMORPHOUS INDIUM GALLIUM ZINC OXIDE TFTS FOR ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE DISPLAY,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October 28-31, 2014, Guilin, China.
56) Junchen Dong, Dedong Han, Feilong Zhao, Nannan Zhao, Jing Wu, Zhuofa Chen, Yingying Cong, Shengdong Zhang, Xing Zhang, Lifeng Liu, Yi Wang, “High negative bias stability Gadolinium-doped Aluminum-Zinc-Oxide thin film transistors,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October 28-31, 2014, Guilin, China.
57) Yi-Bo Zhang, Lei Sun, Hao Xu, Jing-Wen Han, Yi Wang, Shengdong Zhang, “Comparative study of triangular-shaped silicon nanowire transistors,” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), October 28-31, 2014, Guilin, China.
58) Lei Xie, Yang Shao, Xiang Xiao, Letao Zhang, Xiaobin Bi, and Shengdong, Zhang, “Fabrication of indium-tin-oxide thin-film transistor using anodization,” Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on, July 2-4, pp.101-103, 2014, Kyoto, Japan.
59) Stefan Weizhi Meng, Letao Zhang, Xiang Xiao, and Shengdong Zhang, “Study on the transition between p and n types of SnOx film deposited by DC sputtering,” Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on, July 2-4, pp.105-107, 2014, Kyoto, Japan.
60) Peng Zhang, Xiang Xiao, Ling Wang, Yang Shao, and Shengdong Zhang, “Homo-junction In2O3-TFTs Prepared by Anodization Technique,” Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on, July 2-4, July 2-4, pp.327-330, 2014, Kyoto, Japan.
61) Xiaobin Bi, Jianke Yao and Shengdong Zhang, “Magnesium-doped Indium Oxide Thin Film Transistors for Ultraviolet Detection,” 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu, China.
62) Junmei Li，Congwei Liao，ZhiJin Hu，Wenjie Li and Shengdong Zhang, “A Concrete Integrated Gate Driver with Sharing Low-level-holding Structure,” 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu, China.
63) Yang Liu, Longyan Wang, and Shengdong Zhang, “Development of Low Temperature Amorphous Tin-doped Indium Oxide Thin-Film Transistors Technology,” 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu, China.
64) Yuying Cai, Lisa Ling Wang, and Shengdong Zhang, “A Gate-stress-induced ΔVth Model Reflecting Impact of Electric Field in IGZO Thin Film Transistors,” 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu, China.
65) Shuguang Zhang, Letao Zhang, Xiang Xiao and Shengdong Zhang, “Influence of O2 on Al-Zn-Sn-O TFTs in the Active Layer Deposition and Annealing Process,” 2014 IEEE EDSSC, Jun. 18-20, 2014, Chengdu, China.
66) Jing-Wen Han, Lei Sun, Yu-Qian Xia, Hao Xu, Yi-Bo Zhang, Shengdong Zhang and Yi Wang, “Impact of Gate Coupling and Misalignment on Performance of Double-gate Organic Thin Film Transistors,” 2014 IEEE 46th International Conference on Solid State Devices and Materials (SSDM), September 8-11, pp.248-249, 2014, Tsukuba, Japan.
67) Zhijin Hu, Congwei Liao, Junmei Li, Wenjie Li, Shengdong Zhang, Limei Zeng, Chang-Yeh Lee, Tzu-Chieh Lai, Chang-Cheng Lo, and A. Lien, “a-Si:H TFT Gate Driver with Shared Dual Pull-Down Units for Large-Sized TFT-LCD Applications,” SID Symposium Digest of Technical Papers, Special Issue: San Diego, CA, June 1–6, 2014, Volume 45, Issue 1, pages 986–989, June 2014.
68) Jing Wu, Dedong Han, Nannan Zhao, Zhuofa Chen, Yingying Cong, Feilong Zhao, Junchen Dong, Shengdong Zhang, Xing Zhang and Yi Wang, “High-Performance Fully Transparent Hafnium-Doped Zinc Oxide TFTs Fabricated at Low Temperature,” SID Symposium Digest of Technical Papers, Special Issue: San Diego, CA, June 1–6, 2014, Volume 45, Issue 1, pages 997–1000, June 2014.
69) C Liao, Z Hu, W Li, J Li, and Shengdong Zhang, “a-IGZO TFT Based Latch Circuit with High Stability and Full‐Swing Output for System on Panel,” SID Symposium Digest of Technical Papers, Special Issue: San Diego, CA, June 1–6, 2014, Volume 45, Issue 1, pages 1031–1034, June 2014.
70) Yingying Cong, Dedong Han, Dongfang Shan, Yu Tian, Fuqing Huang, Suoming Zhang, Zhuofa Chen, Jing Wu, Nannan Zhao, Feilong Zhao, Juncheng Dong, Shengdong Zhang, Xing Zhang, Yi Wang, “High mobility transparent Al-Sn-Zn-O thin film transistors fabricated at low temperature,” VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on, 28-30 April 2014, Hsinchu Taiwan.
71) Longyan Wang, Yang Liu, Xin He, Yang Shao, Xiang Xiao, and Shengdong Zhang, “Oxide TFT Panel with ITO as Channel Layer, Source/Drain and Pixel Electrode,” The 10th International Thin-Film Transistor Conference (ITC), Delft, Netherland, p. 53-55, 2014.
72) Dedong Han, Zhuofa Chen, Nannan Zhao, Wei Wang, Fuqing Huang, Shengdong Zhang, Xing Zhang, Yi Wang, “Flexible aluminum-doped zinc-oxide thin-film transistor fabricated on plastic substrates”, Proc. SPIE 8987, Oxide-based Materials and Devices V, 89871L, p. 138, San Francisco, USA, Feb. 01, 2014.
73) Zhuofa Chen, Dedong Han, Nannan Zhao, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Shengdong Zhang, Xing Zhang, Yi Wang and Lifeng Liu,“Fully Transparent Dual-active-layer ITO/TZO TFT Fabricated on Glass Substrate at low-temperature,”SSDM 2014, Japan
74) Lingling Huang, Dedong Han, Zhuofa Chen, Yingying Cong, Jing Wu, Nannan Zhao, Junchen Dong, Feilong Zhao, Lifeng Liu, Shengdong Zhang, Xing Zhang and Yi Wang, “High-performance Fully-transparent Ni-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature,” SSDM2014, Japan.
75) Yingying Cong, Dedong Han, Jing Wu, Nanan Zhao, Zhuofa Chen, Feilong Zhao, Junchen Dong, Shengdong Zhang, Xing Zhang and Yi Wang, “Fabrication and Characteristics of Fully-transparent Al-Sn-Zn-O TFTs Fabricated on glass at Low Temperature,”SSDM 2014, Japan .
76) Zhuofa Chen, Dedong Han, Nannan Zhao, Jing Wu, Yingying Cong, Junchen Dong, Feilong Zhao, Lingling Huang, Yi Zhang, Shengdong zhang, Xing Zhang and Yi Wang, “Fully Transparent Tin doped Zinc Oxide Thin Film Transistor Fabricated on Flexible PET Substrate”, ICFPE 2014.
77) Congwei Liao, Zhijin Hu, Chuanli Leng, Can Zheng, and Shengdong Zhang，“A Charge-Cyclic Digital-to-Analog Converter for IGZO TFT Integrated Data Driver”， SID Symposium Digest of Technical Papers 2013，2013/5/20-2013/5/24,Vancouver,Canada.
78) Zhijin Hu, Congwei Liao, Can Zheng and Shengdong Zhang，“A High-Speed and Reliable TFT Integrated Shift Register,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013, (best poster paper award).
79) Xin He, Longyan Wang, Shaojuan Li, Mansun Chan, and Shengdong Zhang, “Implementation of Multi-threshold Voltage a-IGZO TFTs with Oxygen Plasma Treatment,” SSDM 2013, 2013/9/24-2013/9/28, Fukuoka, 2013/9/24.
80) Chuanli Leng, Longyan Wang, Shengdong Zhang, “An AMOLED Pixel Circuit with Negative VTH Compensation Function,” IDW ’13, 2013/12/4-2013/12/6, 2013/12/4.
81) Shipeng Chi, Xiang Xiao, Xin He, and Shengdong Zhang, “Self-Aligned Top-Gate a-IGZO Thin-Film Transistor with N2 Plasma-Treated Source/Drain Regions,” IDW ’13, 2013/12/4-2013/12/6, 2013/12/4.
82) Fuqing Huang, Dedong Han, Dongfang Shan, Yu Tian, Suoming Zhang, Yingying Cong, Yi Wang, Lifeng Liu, Xing Zhang, Shengdong Zhang, “Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013.
83) Dongfang Shan Dedong Han, Fuqing Huang, Yu Tian, Suoming Zhang, Yingying Cong, Yi Wang, Lifeng Liu, Xing Zhang, Shengdong Zhang, “Fabrication and characteristics of fully transparent Aluminum-doped zinc oxide thin-film transistors,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013.
84) Suoming Zhang, Dedong Han, Shuyang Wang, Yu Tian, Dongfang Shan, Fuqing Huang, Cong Yingying, Xing Zhang, Shengdong Zhang, Yi Wang, “Fabrication optimization to improve performance of gallium-doped zinc oxide thin film transistors,” 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),2-5 July 2013, Kyoto, Japan.
85) Suoming Zhang , Yu Tian, Dedong Han, Dongfang Shan, Fuqing Huang, Shuyang Wang, Xing Zhang, Shengdong Zhang, Yi Wang, “High-performance fully transparent Ga-doped ZnO TFTs fabricated by RF Magnetron Sputtering,” 2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), 2013, Hsinchu Taiwan.
86) Changwei Zhen, Shengdong Zhang, “Boron doped ZnO thin films and TFTs fabricated by magnetron sputtering,” PROCEEDINGS OF CHINA DISPLAY/ASIA DISPLAY 2013, Shanghai, 20130320-20130321.
87) Jianke Yao, Shengdong Zhang, “The ultraviolet photo detecting properties of a-IGZO TFTs,” PROCEEDINGS OF CHINA DISPLAY/ASIA DISPLAY 2013, Shanghai, 20130320-20130321.
88) T. C. Liu and J. B. Kuo, Shengdong Zhang, “Grain-Boundary Impact Ionization-Induced Current Hump Effects”, in Proc. IEDMS, 2012, Taiwan.
89) Dedong Han, Youfeng Geng, Jian Cai, Wei Wang, Liangliang Wang, Yu Tian, Yi Wang, Lifeng Liu, Shengdong Zhang, “Reliability study of Zinc Oxide thin-film transistor with High-K gate dielectric,” IEEE EDSSC 2012, Bangkok.
90) Wei Deng, Xin He, Xiang Xiao and Shengdong Zhang, “Comparative Study of a-IGZO TFTs Deposited by RF and DC Sputtering”, IEEE EDSSC 2012, Bangkok.
91) Can Zheng, Congwei Liao, Jianhua Li and Shengdong Zhang, “Design of Driving Transistor in a-Si:H TFT Gate Driver Circuit”, IEEE EDSSC 2012, Bangkok.
92) Lisa L. Wang, James B. Kuo and Shengdong Zhang, “Modeling Hot-Carrier-Induced Reliability of Poly-Silicon Thin Film Transistors”, IEEE EDSSC 2012, Bangkok.
93) Shaojuan Li, Xin He, Dedong Han, Yi Wang, Lei Sun, and Shengdong Zhang, “Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-Layer”, International Conference on Solid-State and Integrated Circuit Technology,2012, Tianjing.
94) Chuanli Leng, Congwei Liao, Longyan Wang, Shengdong Zhang, “An a-IGZO TFT Pixel Circuit for AMOLED with Simultaneous VT Compensation”, International Conference on Solid-State and Integrated Circuit Technology, 2012 Tianjing.
95) Ruhai Fu, Congwei Liao, Chuanli Leng, Shengdong Zhang, “An IGZO TFT Based In-Cell Capacitance Touch Sensor”, International Conference on Solid-State and Integrated Circuit Technology,2012 Tianjing.
96) Shaojuan Li, Lei Sun, Dedong Han, Yi Wang, Ruqi Han, and Shengdong Zhang, “Stability of Zinc Oxide Thin-Film Transistors”, ECS Transactions 2012, Volume 44, Issue 1, Pages 57-62.
97) Tony C. Liu, James B. Kuo and Shengdong Zhang, “Channel Length-Dependent Parasitic Bipolar Transistor Effect in Poly-Si TFTs Considering Traps at Grain Boundary”, International Conference on Solid-State and Integrated Circuit Technology,2012 Tianjing.
98) T.C. Liu, J.B. Kuo, and Shengdong Zhang, “Floating-Body Kink Effect: Poly-Si TFT versus SOI CMOS”, in Proc. EuroSOI, 2012.
99) Jian Cai, Dedong Han, Youfeng Geng, Wei Wang, Liangliang Wang, Yu Tian, Huikun Yao, Lixun Qian, Shengdong Zhang and Yi Wang, “High-Performance Transparent Top-Gate AZO TFTs Fabricated by Low-Temperature Process”, the 2012 International Conference on Solid State Devices and Materials (SSDM2012), Japan.
100) Wei Wang, Dedong Han, Jian Cai, Youfeng Geng, Liangliang Wang, Yu Tian, Yi Wang and Shengdong Zhang, “Fully Transparent AZO Thin-film Transistors Fabricated on Flexible Plastic Sub-strates at Room Temperature”, the 2012 International Conference on Solid State Devices and Materials (SSDM2012), Japan.
101) Youfeng Geng, Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yu Tian, Huikun Yao, Lixun Qian, Yi Wang and Shengdong Zhang, “High Performance Dual-layer Channel ZnO Thin-Film Transistor”, the 2012 International Conference on Solid State Devices and Materials (SSDM2012), Japan.
102) Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yi Wang and Shendong Zhang, “High performance Aluminum-doped ZnO thin film transistors with high-K gate dielectrics fabricated at low temperature”, European Materials Research Society (E-MRS) 2012 spring meeting, France.
103) Dedong Han, Wei Wang, Jian Cai, Liangliang Wang, Yicheng Ren, Yi Wang and Shengdong Zhang, “Flexible thin-film transistors fabricated on plastic substrate at room temperature,” European Materials Research Society (E-MRS) 2012 spring meeting, France.
104) Dedong Han, Jian Cai, Wei Wang, Liangliang Wang, Yicheng Ren, Shaojuan Li, Yi Wang, and Shengdong Zhang, “High performance ZnO-based thin film transistor with high-κ gate dielectrics fabricated at low temperature,” TechConnect World 2012, U.S.A.
105) Jian Cai, Dedong Han, Wei Wang, Liangliang Wang, Yi Wang and Shendong Zhang, “High performance RF sputtering deposited AZO thin-film transistors after a post-annealing process”, 2012 Second International Conference on Electric Information and Control Engineering (ICEICE2012) 693-695
106) Wei Wang, Dedong Han, Jian Cai1, Youfeng Geng, Liangliang Wang, Yicheng Ren, Hao Deng, Yi Wang and Shengdong Zhang, “Al-doped ZnO Thin-Film Transistors on Flexible Plastic Substrate”, The Nineteenth International Workshop on Active-matrix Flatpanel Displays and Devices, 2012, 7, Japan
107) Li, Xia, Sun Shuo, Suo Jian, Shengdong Zhang, Zhang, Fujia, “XRD Analysize PTCDA Film Evaporatived on p-Si (110) Substrate”, 2012 Symposium on Photonics and Optoelectronics, SOPO 2012, pp.1~4.
108) Li Xia, Chu Junhao, Li Longxia, Dai Ning, Shengdong Zhang, Zhang Fujia, Fabrication and Characterization of Room Temperature Nuclear Radiation CdZnTe 3×3 Pixel Array Detector, 2012 Symposium on Photonics and Optoelectronics, SOPO 2012.
109) Yicheng Ren, Dedong Han, Lei Sun，Gang Du, Shengdong Zhang. Xiaoyan Liu, Yi Wang， Effects of non-uniform grains distribution of the intrinsic n-channel polycrystalline silicon TFTs, IEEE International Conference on Electron Device and Solid-State Circuits 2011, 41, Tian Jing.
110) Shaojuan Li, Dedong Han, Yi Wang, and Shengdong Zhang, “High performance reactive sputtering deposited ZnO thin-film transistors on transparent substrate”, IEEE International Conference on Electron Devices and Solid-State Circuits, December 11-12, 2011, Tianjing.
111) Xing Lin, Shengdong Zhang, “High performance Zn1-xMgxO TFTs for UV Image Sensors”, IEEE International Conference on Electron Devices and Solid-State Circuits, December 11-12, 2011, Tianjing.
112) Xia Li, Shengdong Zhang, Fujia Zhang, Jing Wang, Haoli Zhang, "Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector", 2011 Symposium on Photonics and Optoelectronics, SOPO 2011.
113) Jianke Yao, Shengdong Zhang, “Effects of channel composition and gate dielectrics on the stability of a-IGZO TFTs”, Digest of Technical Papers, ASID'11, pp. 373-376.
114) Y. L. Li, X. He, X. Lin, B. B Jiang, S. J. Li, Shengdong Zhang, “Low-temperature materials and thin film transistors for flexible electronics”, Digest of Technical Papers, ASID'09, pp. 367-370.
115) X. He, S. J. Li, X. Lin, B. B. Jiang, Y. L. Li, Shengdong Zhang, “The Source/Drain Resistance of a-IGZO TFT”, Digest of Technical Papers, ASID'11, pp. 540-543.
116) B. B. Jiang, X. Lin, S. J. Li, X. He, Y. L. Li, Shengdong Zhang, “Structural, Electrical and Optical Properties of Zn1-xMgxO Films Prepared Reactive DC Sputtering”, Digest of Technical Papers, ASID'11, pp. 556-559.
117) X. Lin, B. B Jiang, S. J. Li, Y. L. Li, X. He, Shengdong Zhang, “Reactive DC Magnetron Sputtering Deposited ZnMgO Transparent Thin-Film Transistors”, Digest of Technical Papers, ASID'11, pp. 568-571.
118) Xiaoming Liu, Congwei Liao, Tao Chen, David Dai, Smart Chung, T. S. Jen and Shengdong Zhang, “Hybrid Driving Scheme of a-Si TFT pixel circuit for AMOLEDs”, Digest of Technical Papers, ASID'11, pp. 208-211.
119) Congwei Liao, Xiaoming Liu, Tao Chen, David Dai, Smart Chung, T. S. Jen and Shengdong Zhang, “Data Signal Induced Feed-through Effects in Integrated a-Si:H Gate Driver”, Digest of Technical Papers, ASID'11, pp. 389-392.
120) Shao-Juan Li, Dedong Han, Lei Sun, Yi Wang, Ru-Qi Han and Shengdong Zhang, “High Performance RF Sputtering Deposited ZnO Thin-Film Transistors”, Digest of Technical Papers, ASID'11, pp. 393-396.
121) Tao Chen, Congwei Liao, Xiaoming Liu, David Dai, Smart Chung, T. S. Jen and Shengdong Zhang, “A Compact Integrated Hydrogenated Amorphous Silicon Gate Driver for TFT- LCD”, Digest of Technical Papers, ASID'11, pp. 530-533.
122) Yicheng Ren, Dedong Han, Lei Sun, Gang Du, Shengdong Zhang, Xiaoyan Liu, Yi Wang, “Performance of Asynchronous Double-gate Poly-Si Thin-film Transistors”, Digest of Technical Papers, ASID'11, pp. 552-555.
123) Huajie Luo, Shengdong Zhang, Peng Jin, Optimization of trichromatic color temperature tunable white light LEDs, 2011 International Conference on Electronics and Optoelectronics (ICEOE), 2011 , Page(s): V3-287 - V3-290.
124) Chunyu Yu, Lingli Kong, Junju Zhang, Shengdong Zhang, "3D information extraction based on a novel x-ray imaging system", International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, Proc. of SPIE Vol. 8194, 81942M.
125) Chunyu Yu, Lingli Kong, Junju Zhang, Shengdong Zhang, "The x-ray imaging system’s requirements for CCD pixel," International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, Proc. of SPIE Vol. 8194, 819415.
126) Chunyu Yu, Lingli Kong, Junju Zhang, Shengdong Zhang, "The low light level image intensifier’s application in x ray imaging" International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, Proc. of SPIE Vol. 8194, 81941M.
127) Chunyu Yu, Lingli Kong, Junju Zhang, Shengdong Zhang,"Light decreases through the x-ray imaging chain International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Imaging Detectors and Applications, Proc. of SPIE Vol. 8194, 81941V.
128) Changde He, Congwei Liao, Yinan Liang, and Shengdong Zhang, "A New Integrated Gate Driver with Shift Register Circuits Employing 4 Clocks for 14.1-inch TFT-LCD,"Electrical and Control Engineering (ICECE), 2010 International Conference on, pp. 149-152.
129) Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, “Comparative study on fabrication methods of ZnO thin films”, European Materials Research Society (E-MRS) 2010 fall meeting, Poland.
130) Han DeDong, Wang Yi, Zhang ShengDong, Sun Lei, Han RuQi, “Annealing Effect on characteristics of ZnO-based thin-film transistors”, European Materials Research Society (E-MRS) 2010 fall meeting, Poland.
131) Linfeng Du and Shengdong Zhang, “RDF Effect Induced by Source/Drain Doping in Nano-Scale UTB SOI MOSFET with Nominally Un-doped Channel,” Proceedings of 2010 IEEE Conference on Electron Devices and Solid-State Circuits, December 15-17, 2010, pp. 683-686, Hong Kong.
132) Longyan Wang, Congwei Liao, Yinan Liang, and Shengdong Zhang, "A New Four-Transistor Poly-Si TFT Pixel Circuit for AMOLED," The 10th International Conference on Solid-State and Integrated-Circuit Technology, Nov. 1~4, pp.1453-1455, 2010.
133) Congwei Liao, Longyan Wang, Changde He, Yinan Liang, David Dai, Smart Chung,T. S. Jen, and Shengdong Zhang，“A Fast Integrated a-Si Gate Driver”，The 10th International Conference on Solid-State and Integrated-Circuit Technology, Nov. 1~4, pp.1438-1440, 2010.
134) Linfeng Du, Shengdong Zhang, “Source/Drain Doping Induced Vth Variation in Nano-scale UTB SOI MOSFET”, 2010 International Conference on Solid State Device and Materials (SSDM), September 22 -24, Tokyo, Japan.
135) Changde He, Congwei Liao, Yinan Liang and Shengdong Zhang, "Integrated a-Si:H TFT Gate driver for 14.1-inch WXGA TFT-LCD", Digest of Technical Papers, ASID'09, pp. 63-66.
136) Congwei Liao, Changde He, Yinan Liang and Shengdong Zhang, "A New Integrated a-Si:H TFT Gate Driver with Q Node quasi-Grounded", Digest of Technical Papers, ASID'09, pp. 55-58.
137) Yinan Liang, Congwei Liao, Changde He, and Shengdong Zhang, "Error Current Effects in Current-Programmed Pixel Circuits For AMOLED", Digest of Technical Papers, ASID'09, pp. 152-156.
138) Shao-Juan Li1, Lei Sun1, Yi Wang1, Ruqi Han1 and Shengdong Zhang,"Reactive Sputtered Deposition and Etched Patterning of ZnO Films for Active Matrix Flate Panel Display (AM FPD)", Digest of Technical Papers, ASID'09, pp. 286-289.
139) Congwei Liao, Shengdong Zhang, "A Novel Super-Halo Doping Concept for Nanoscale CMOS Technology". ECS Transactions, Vol.18(1), ISTC/CSTIS 2009 (CISTC), pp.111-116.
140) Linfeng Du, Hui Deng, Gang Du and Shengdong Zhang, "Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET". ECS Transactions, Vol.18(1), ISTC/CSTIS 2009 (CISTC), pp.77-81.
141) Dedong Han, Yi Wang, Shengdong Zhang, Lei Sun and Ruqi Han, "Fabrication and Characteristics of ZnO-based Thin Film Transistors",The 9th International Conference on Solid-State and Integrated-Circuit Technology, Oct. 20~23, pp.982-984, 2008.
142) Xu Han, Dingyu Li, Chengen Yang and Shengdong Zhang, “A Simple Nano-Scale Patterning Technology for FinFET Fabrication”, The 9th International Conference on Solid-State and Integrated-Circuit Technology, Oct. 20~23, pp.184-186, 2008.
143) M. Chan, Shengdong Zhang, X. Lin, X. Wu, and P. C. H. Chan (invited), "3-Dimensional Integration for Interconnect Reduction in for Nano-CMOS Technologies", IEEE Tencon, November 23, 2006, Hong Kong.
144) Wei Ke, Xu Han, Dingyu Li, Xiaoyan Liu, Ruqi Han, and Shengdong Zhang, " Recessed Source/Drian for Scaling SOI MOSFET to the Limit", The 8th International Conference on Solid-State and Integrated-Circuit Technology, Oct. 23~26, pp.84-86, 2006.
145) Ji Cao, Dingyu Li, Wei Ke, Lei Sun, Ruqi Han, and Shengdong Zhang, “T-Shaped Body Silicon-on-Insulator (SOI) MOSFET”, The 8th International Conference on Solid-State and Integrated-Circuit Technology, pp.1293-1295, Oct. 23~26, 2006.
146) Wei Ke, Shengdong Zhang, X. Liu, and Ruqi Han, “Soruce/Drain Resistance of UTB SOI MOSFET,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits, December 19-21, 2005, pp. 405-408, Hong Kong.
147) Dingyu Li, We Ke, L. Sun, Ruqi Han, and Shengdong Zhang, “ A MOS Transistor with Source/Drain on Insulator and Channel Doped in Step-Function Profile,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits, December 19-21, 2005, pp. 683-686, Hong Kong.
148) X. Wu, P. C. Chan, Shengdong Zhang, and M. Chan, “A Capped Trimming Hard-Mask Patterning Technique for Integration of Nano-Devices and Conventional Integrated Circuits,” Proceedings of 2005 IEEE Conference on Electron Devices and Solid-State Circuits, December 19-21, 2005, pp. 781-784, Hong Kong.
149) Philip C.H. Chan, Xusheng Wu, Shengdong Zhang, Chuguang Feng, Mansun Chan “Three-Dimensional Stacked-Fin-CMOS Integrated Circuit Using Double Layer SOI Material”, The 7th International Conference on Solid-State and Integrated-Circuit Technology, Oct. 19~21, 2004.
150) Wei Ke, Shengdong Zhang, Xiaoyan Liu and Ruqi Han, “Scalability and Parasitic Effect of UTB SOI MOSFETs with Raised S/Dand Sunk S/D”, The 7th International Conference on Solid-State and Integrated-Circuit Technology, Oct. 19~21, 2004.
151) Dingyu Li, Lei Sun, Zhiliang Xia, Shengdong Zhang, Xiaoyan Liu, Jinfeng Kang, Ruqi Han “Novel Schottky Barrier MOSFET with Dual-layer Silicide Source/Drain Structure”, The 7th International Conference on Solid-State and Integrated-Circuit Technology, Oct. 19~21, 2004.
152) Shengdong Zhang, Xinnan Lin, Ruqi Han, Xusheng Wu and Mansun Chan, “A Vertical SOI CMOS Technology with p-MOSFET on SOI Film and n-MOSFET on bulk base”, 2004 International Conference on Solid State Device and Materials (SSDM), September 14 – 27, pp.770－771，Tokyo, Japan
153) Zhikuan Zhang, Shengdong Zhang and Mansun Chan, “Self-Aligned Recessed Source/Drain Ultra-Thin Body SOI MOSFET Technology”, Proceedings of the 34th European Solid-State Device Research Conference (ESSDERC 2004), pp. 301-304, September 21-23, 2004, Leuven, Belgium
154) Z. Zhang, Shengdong Zhang, C. Feng, and M. Chan, "A Study of Source/Drain-On-Insulator Structure for Extremely Scaled MOSFETs", 62nd Device Research Conference Digest, pp. 115-116, June 21-23, 2004, University of Notre Dame, Indiana, USA
155) X. Wu, Shengdong Zhang, M. Chan, and P. Chan, "Design of Sub-50nm Ultrathin-Body (UTB) SOI MOSFETs with Raised S/D", Proceedings of 2003 IEEE Conference on Electron Devices and Solid-State Circuits, December 16-18, 2003, pp. 327-330, Hong Kong
156) Shengdong Zhang, Ruqi Han, Zhikuan Zhang, Xinnan Lin, Ping K. Ko and Mansun Chan, “A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM,” 32st European Solid-State Device Research Conference (ESSDERC 2001). September, 2002.
157) Jagar Singh, Shengdong Zhang, and Mansun Chan, “A Unified Predictive TFT Model with Capability for Statistical Simulation,” 2001 International Semiconductor Device Research Symposium, December5-7, 2001, Holiday Inn Georgetown 2001 Wisconsin Avenue, N.W. Washington, D. C.
158) Shengdong Zhang, Ruqi Han, Johnny K. O. Sin, and Mansun Chan, “A Self-Aligned Double-Gate Polysilicon TFT Technology,” 2001 International Semiconductor Device Research Symposium, December5-7, 2001, Holiday Inn Georgetown 2001 Wisconsin Avenue, N.W. Washington, D. C.
159) Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, and Mansun Chan, “A Simple Method to Fabricate Double-Gate SOI MOSFET with Diffusion Layer on Bulk Silicon Wafer as the Bottom,” 2001 International Conference on Solid State Device and Materials (SSDM), September 25 – 28, pp.252-253 Tokyo, Japan.
160) Xinnan Lin, Chuguang Feng, Shengdong Zhang, Wai-Hung Ho, and Mansun Chan, “Double-Gate SOI MOSFET Fabrication from Bulk Silicon Wafer,” 2001 IEEE International SOI Conference, October 1 to 4, 2001, pp. 93-94, Sheraton Tamarron Resort, Durango, CO, USA.
161) Shengdong Zhang, Mansun Chan, Ruqi Han Xiaoyan Liu, Y.Y. Wang, “Development and properties of self-aligned double-gate p-Si TFT” The Sixth International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2001), October 22, 2001, Shanghai, China.
162) Shengdong Zhang, Ruqi Han, Mansun Chan, “ A Novel self-aligned bottom gate TFT technology,” 31st European Solid-State Device Research Conference (ESSDERC 2001). September, 2001, pp. 475-478 Nuremberg, Germany.
163) Shengdong Zhang, Ru-qi Han, Mansun Chan, Xiao-yan Liu, Xu-dong Guan, “A Novel Sub-50 nm Poly-Si Gate Patterning Technology”, IEEE Region 10 International Conference on Electrical & Electron Technology (TENCON 2001). August, 2001, pp. 841-843, Singapore.
164) Shengdong Zhang, Ru-qi Han, Xiao-yan Liu, Xu-dong Guan, Tin Li, and Dachen Zhang, “A Lithography Independent Gate Definition Technology for Fabricating Sub-100nm Devices”， 2001 IEEE Hong Kong Electron Device Meeting, June 30, 2001, pp.81-84.
165) Chunxiang Zhu, Shengdong Zhang, Sin JKO, Mok PKT，“Ultra-thin elevated channel low temperature poly-Si TFTs for fully-integrated AMLCD systems on glass”，ESSDERC'99. Proceedings of the 29th European Solid-State Device Research Conference. Editions Frontieres. 1999, pp.708-11. Neuilly sur Seine, France.
166) Shengdong Zhang, Kumar A, Sin JKO. “Development of low temperature poly-silicon TFT with excellent saturation characteristics.” Proceedings of the 18th. International Display Research Conference. Soc. Inf. Display (SID). 1998, pp.361-4. San Jose, CA, USA.
167) Shengdong Zhang , Sin JKO. A high-performance bi-directional super-MIM diode with symmetrical and shift-free I-V characteristics. 1998 SID International Symposium. Digest of Technical Papers. Vol. 29. Soc. Inf. Display. 1998, pp.447-50. Santa Anaheim, CA, USA.
168) Shengdong Zhang, Wang G-L, Zheng C-W, Cheng X-X. “Development of self-alignment edge junction MIM matrix for LCD.” SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol.2892, 1996, pp.178-83. USA.
授权发明专利清单
1. Method for fabricating a metallic oxide thin film transistor, Shengdong Zhang; Yang Shao; Xiang Xiao; Xin He, US 9893173.
2. Complementary metal oxide semiconductor element and manufacture method thereof,Mian Zeng; Xiangzhi Xiao; Shengdong Zhang, US 9887242.
3. Adaptive voltage source, shift register and unit thereof, and display, Shengdong Zhang; Congwei Liao; Zhijin Hu; Wenjie Li; Junmei Li, US 9886050.
4. Pixel circuit and drive method therefor, and display device, Shengdong Zhang; Cuicu Wang; Chuanli Leng; Longyan Wang, US 9779662.
5. Method for manufacturing transistor, Zhang Shengdong; He Xin; Wang Longyan, US 9129992.
6. Gate driver on array (GOA) circuit and display panel with same, Zhang Shengdong; Hu Zhijin; Liao Congwei; Zeng Limei; Lee Changyeh, US 9117418.
7. Dual-gate FinFET, Zhang Shengdong; Han Ruqi; Han Dedong, US 9058986.
8. Method for manufacturing self-aligned thin film transistor, Zhang Shengdong; He Xin; Wang Yi; Han Dedong; Han Ruqi, US 8956926.
9. Gate driving circuit unit, gate driving circuit and display device, Zhang Shengdong; Liao Congwei; He Changde; Dai Wenjun, US 8766958.
10. Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuits, Chan P.; Chan M.; Wu X.; Zhang Shengdong, US 7545008.
11. “一种有机发光二极管面板、栅极驱动电路及其单元”，张盛东；胡治晋；廖聪维；李文杰；李君梅；曹世杰，2015102630965。
12. “像素电路及其驱动方法和显示装置”，张盛东；孟雪；冷传利，2015102013496。
13. “显示装置及其驱动方法”，张盛东；冷传利；孟雪；王翠翠，2014108286488。
14. “显示装置及其像素电路、驱动方法”，张盛东；王翠翠；冷传利；鲁文高；陈中建；张雅聪，2014107894679。
15. “一种显示装置及其像素电路”，张盛东；王翠翠；冷传利，2015101917474。
16. “一种像素矩阵的外围补偿系统、方法和显示系统”，林兴武；张盛东；冷传利；王翠翠；孟雪；张敏，2015104080616。
17. “栅极驱动电路及显示装置”，张盛东；廖聪维；胡治晋，2015100028637。
18. “自适应电压源、移位寄存器及其单元和一种显示器”，张盛东；廖聪维；胡治晋；李文杰；李君梅，2014101977470。
19. “一种像素电路及显示装置”，张盛东；王翠翠；冷传利，2014100589919。
20. “移位寄存器、栅极驱动电路单元、栅极驱动电路及显示器”，张盛东；李君梅；廖聪维；胡治晋；李文杰，2013106646681。
21. “像素电路及其驱动方法和一种显示装置”，林兴武；张盛东；孟雪；冷传利；王翠翠，2015100597587。
22. “一种X射线探测仪及其薄膜晶体管制备方法”，张盛东；卢慧玲；肖祥，2016104738540。
23. “一种薄膜晶体管及其制备方法”，张盛东；肖祥；邵阳；王龙彦，2014101067973。
24. “移位寄存器及其单元和一种显示装置”，张盛东；胡治晋；廖聪维；李文杰；李君梅；曹世杰，2015101752170。
25. “显示装置及其像素电路和驱动方法”，张盛东；孟雪；冷传利；王翠翠，2015101226226。
26. “移位寄存器单元、栅极驱动电路和显示器”，张盛东；胡治晋；廖聪维；李文杰；李君梅，2013106289307。
27. “像素电路及其显示装置和一种像素电路驱动方法”，张盛东；冷传利；王翠翠，2013106167831。
28. “一种有机发光二极管面板、栅极驱动电路及其单元”，张盛东；胡治晋；廖聪维；李文杰；李君梅；曹世杰，2015102630965。
29. “像素电路、显示装置及显示驱动方法”，林兴武；张盛东；孟雪；冷传利； 王翠翠， 2014108118177。
30. “像素电路及其驱动方法和一种显示装置”，张盛东；王翠翠；冷传利；王龙彦，2014102279160。
31. “一种像素电路、显示装置及显示驱动方法”，张盛东；王翠翠；冷传利，2014100589707。
32. “一种垂直环栅隧穿晶体管及其制备方法”，孙雷；徐浩；张一博；韩静文；王漪；张盛东，2014103923051。
33. “一种金属氧化物薄膜晶体管制作方法”，张盛东；邵阳；肖祥；贺鑫，2014105621696。
34. “栅驱动电路及其单元和一种AMOLED显示器”，张盛东；廖聪维；胡治晋；李文杰；李君梅，2014106914961。
35. “像素电路及其驱动方法和一种显示装置”，张盛东；王翠翠；冷传利，2015101335242。
36. “显示装置及其像素电路和显示驱动方法”，张盛东；冷传利；王翠翠，2014100185633。
37. “栅极驱动电路及其单元和一种显示装置”，张盛东；冷传利；胡治晋；廖聪维，2015102013015。
38. “一种触控电路及其单元和触控显示面板及其装置”，张盛东；廖聪维；胡治晋；李君梅；李文杰，2013107546731。
39. “多路分配器、源极驱动电路和显示器”，张盛东；廖聪维；胡治晋，2014107272878。
40. “显示器及其栅极驱动电路和栅极驱动电路单元”，张盛东；李文杰；廖聪维；胡治晋；李君梅，201310711367X。
41. “一种杂质分凝肖特基源漏器件及其制备方法”，孙雷；徐浩；张一博；韩静文；王漪；张盛东，2014103922330。
42. “一种芯-壳场效应晶体管及其制备方法”，孙雷；徐浩；张一博；韩静文；王漪；张盛东，2014104278143。
43. “一种紫外光传感电路及感应系统”，张盛东；廖聪维；胡治晋；李文杰；李君梅，2014100792481。
44. “一种薄膜晶体管的制备方法”，张盛东；冷传利，2013102338802。
45. “金属氧化物薄膜晶体管制备方法”，张盛东；邵阳；肖祥；贺鑫，2014105626806。
46. “一种移位寄存器单元和栅极驱动电路及其显示器”，张盛东；胡治晋；廖聪维；李文杰；李君梅，2013106291966。
47. “可控电压源、移位寄存器及其单元和一种显示器”，张盛东；廖聪维；胡治晋；李文杰；李君梅，2014103805661。
48. “栅极驱动电路及其单元和一种显示器”，张盛东；廖聪维；胡治晋；李文杰；李君梅，201410060595X。
49. “一种非对称肖特基源漏晶体管及其制备方法”，孙雷；徐浩；张一博；韩静文；王漪；张盛东，201410392235X。
50. “一种环栅场效应晶体管及其制备方法”，孙雷；徐浩；张一博；韩静文；王漪；张盛东，2014103921056。
51. “一种无结场效应晶体管及其制备方法”，孙雷；徐浩；张一博；韩静文；王漪；张盛东，2014104293919。
52. “移位寄存器及其单元、显示器和阈值电压补偿电路”，张盛东；胡治晋；廖聪维；李文杰；李君梅；曹世杰，2014105315262。
53. “一种自对准双层沟道金属氧化物薄膜晶体管及其制作方法”，张盛东；肖祥；迟世鹏；冷传利；邵阳，2013102337710。
54. “输出放大器、数模转换器、数据驱动电路和显示装置”，张盛东；廖聪维；胡治晋，2013103642852。
55. “触控单元电路、触控面板阵列和显示面板”，张盛东；廖聪维；胡治晋，2013103852282。
56. “薄膜晶体管及其制作方法”，张盛东；邵阳；贺鑫；肖祥，2013101304743。
57. “集成栅极驱动电路及具有集成栅极驱动电路的显示面板”，张盛东；胡治晋；廖聪维；曾丽媚；李长晔，2014100262042。
58. “一种非晶薄膜晶体管及其制备方法”，姚建可；张盛东，2011102136106。
59. “像素电路、显示装置及显示驱动方法”，冷传利；张盛东，2013100296951。
60. “移位寄存器单元、栅极驱动电路及显示器”，张盛东；廖聪维；胡治晋，2013105167181。
61. “源/漏区抬高的顶栅自对准薄膜晶体管及其制作方法”，张盛东；迟世鹏；肖祥，2013102336296。
62. “一种锁存器电路单元及用于显示装置的数据驱动电路”，张盛东；廖聪维；胡治晋，2013102481961。
63. “一种底栅自对准氧化锌薄膜晶体管的制备方法”，王漪；王亮亮；韩德栋；蔡剑；王薇；耿友峰；任奕成；张盛东；刘晓彦；康晋锋，2012100503092。
64. “一种显示装置及其像素电路”，张盛东；冷传利；蔡玉莹，2013103025114。
65. “栅极驱动电路单元、栅极驱动电路及显示器”，张盛东；郑灿；廖聪维；陈韬；刘晓明；戴文君；钟德镇；简庭宪，2012102771137。
66. “同异步双栅TFT-OLED像素驱动电路及其驱动方法”，王漪；王亮亮；韩德栋；蔡剑；王薇；耿友峰；张盛东；刘晓彦；康晋锋，2012103897857。
67. “移位寄存器单元、栅极驱动电路、数据驱动电路及显示器”，张盛东；胡治晋；廖聪维，2013100142474。
68. “驱动电路单元、栅极驱动电路及显示装置”，张盛东；郑灿；廖聪维；陈韬；刘晓明；戴文君；钟德镇；简庭宪，2012100862292。
69. “一种3D氧化物半导体薄膜晶体管及其制备方法”，王漪；蔡剑；韩德栋；王亮亮；任奕成；张盛东；孙雷；刘晓彦；康晋锋，201210175109X。
70. “一种氧化锌薄膜晶体管的制备方法”，韩德栋；蔡剑；王漪；王薇；王亮亮；任奕成；张盛东；刘晓彦；康晋锋，2012100083236。
71. “一种金属氧化物半导体薄膜晶体管的制作方法”，张盛东；贺鑫；林鑫；姜蓓蓓；李绍娟，2011101360621。
72. “一种像素驱动电路及其驱动方法”，韩德栋；蔡剑；王龙彦；刘盖；王亮亮；马建忠；丛瑛瑛；张翼；田宇；张索明；单东方；黄福青；王漪；张盛东；刘晓彦；康晋锋，2012104253556。
73. “一种双极性薄膜晶体管及其制备方法”，姚建可；张盛东，2011102064042。
74. “一种像素电路、显示装置及其驱动方法”，张盛东；冷传利，2012102886658。
75. “高K金属栅MOS晶体管的制造方法”，张盛东；韩汝琦；韩德栋，2011100207268。
76. “一种源极驱动电路及显示设备”，张盛东；梁逸南；王龙彦；廖聪维，2010102112573。
77. “栅极驱动单元电路及其栅极驱动电路和显示装置”，张盛东；廖聪维；郑灿；胡治晋，2012104280159。
78. “一种顶栅氧化锌薄膜晶体管的制备方法”，韩德栋；蔡剑；王薇；王亮亮；王漪；张盛东；任奕成；刘晓彦；康晋锋，2011104233721。
79. “栅极驱动电路单元、栅极驱动电路和显示装置”，张盛东；陈韬；廖聪维；刘晓明；戴文君；钟德镇；简庭宪，2011103757378。
80. “栅极驱动单元电路及其栅极驱动电路和一种显示器”，张盛东；廖聪维；郑灿；戴文君；钟德镇；简庭宪，2012102614102。
81. “一种顶栅自对准氧化锌薄膜晶体管的制备方法”，王漪；蔡剑；王薇；韩德栋；王亮亮；任奕成；张盛东；刘晓彦；康晋锋，2011104017309。
82. “一种数据驱动电路及其显示装置”，张盛东；廖聪维；陈韬；刘晓明，201110420833X。
83. “一种像素电路及显示设备”，王龙彦；张盛东；梁逸南；廖聪维，2010102040151。
84. “一种显示装置及其数据驱动电路”，张盛东；廖聪维；陈韬；刘晓明，2011104263619。
85. “一种像素电路及显示设备”，张盛东；王龙彦；梁逸南；廖聪维，2010101895114。
86. “一种纳米线及纳米线晶体管的制作方法”，张盛东；黄如；韩汝琦，2010106163589。
87. “栅极驱动电路单元、栅极驱动电路及显示装置”，张盛东；廖聪维；何常德；戴文君，2010101117917。
88. “一种栅极驱动电路及显示装置”，张盛东；廖聪维；陈韬；刘晓明；戴文君；钟德镇；简庭宪，2011101925025。
89. “一种氧化亚铜薄膜晶体管及其制备方法”，姚建可；张盛东，2011101941210。
90. “栅极驱动电路单元及栅极驱动电路”，张盛东；廖聪维；陈韬；刘晓明；戴文君；钟德镇；简庭宪，2011101085431。
91. “一种晶体管的制造方法”，张盛东；贺鑫；王龙彦，2010105683035。
92. “一种FinFET晶体管的制作方法”，张盛东；韩汝琦；韩德栋，2011100011286。
93. “二次光刻制备薄膜晶体管的方法”，韩德栋；王漪；张盛东；孙雷；张韬；任奕成；康晋锋；刘晓彦；韩汝琦，2010105040990。
94. “一种部分耗尽的绝缘层上硅MOS晶体管的制作方法”，张盛东；廖聪维；韩汝琦，2009101094433。
95. “一种单片集成紫外图像传感器及其像素单元以及制备方法”，张盛东；王漪；金玉丰，2008101188756。
96. “一种紫外图像传感器的像素单元结构及其制备方法”，张盛东；王漪；金玉丰，2008101188760。
97. “一种自对准的金属氧化物薄膜晶体管的制作方法”，张盛东；李绍娟；王漪；孙雷；关旭东；韩汝琦，2009100777315。
98. “一种金属氧化物薄膜晶体管及其制作方法”，张盛东；李绍娟；王漪；孙雷；关旭东；韩汝琦，2009100777334。
99. “MOS晶体管体区的掺杂方法”，张盛东；廖聪维；孙雷；陈文新；韩汝琦，2007101771054。
100.“一种准双栅MOS晶体管的制备方法”，张盛东；李定宇；陈文新；韩汝琦，2007101762074。
101.“一种制作FinFET晶体管的方法”，张盛东；李定宇；陈文新；韩汝琦，200710176291X。
102.“一种制作准双栅MOSFET晶体管的方法”，张盛东；李定宇；陈文新；韩汝琦，2007101762924。
103.“一种利用外延工艺制备鳍形场效应晶体管的方法”，张盛东；李定宇；陈文新；韩汝琦，2007101221567。
104.“一种部分耗尽的SOI MOS晶体管的制备方法”，张盛东；李定宇；陈文新；韩汝琦，2007101218028。
105.“一种体硅MOS晶体管的制作方法”，张盛东；张志宽；陈文新；韩汝琦，200410009320X。
106.“一种不对称肖特基势垒MOS晶体管及其制作方法”，孙雷；李定宇；张盛东；吴涛；韩汝琦；刘晓彦，2006101403908。
107.“一种MOS晶体管及其制作方法”，孙雷；李定宇；张盛东；吴涛；韩汝琦；刘晓彦，2006101403912。
108.87. “一种部分耗尽的SOI MOS晶体管及其制作方法”，张盛东；李定宇；韩汝琦；王新安；张天义，2006100725069。
109.“一种部分耗尽SOI结构的MOS晶体管及其制作方法”，张盛东；李定宇；韩汝琦；王新安；张天义，200610103561X。
110.“一种肖特基势垒MOS晶体管及其制作方法”，李定宇；孙雷；张盛东；刘晓彦；韩汝琦，2005101300019。
111.“一种源漏位于绝缘层上的MOS晶体管的制作方法”，李定宇；张盛东；柯伟；孙雷；韩汝琦，2005100863238。
112. “一种源漏位于绝缘层上的MOS晶体管的制作方法”，张盛东；李定宇；柯伟；孙雷；韩汝琦，2005100863242。
113.“一种源漏下陷型超薄体SOIMOS晶体管及其制作方法”，张盛东；陈文新；张志宽；黄如；韩汝琦，2003101034242。
114.“一种双栅金属氧化物半导体晶体管及其制备方法”，张盛东；陈文新；黄如；刘晓彦；张兴；韩汝琦；王阳元，031377718。
115.“一种互补金属氧化物半导体集成电路及其制备方法”，张盛东；陈文新；黄如；刘晓彦；张兴；韩汝琦；王阳元，031377432。
116.“一种位于SOI衬底上的CMOS电路结构及其制作方法”，张盛东；陈文新；吴旭升；韩汝琦，2004100093178。
117.“一种半导体快闪存储器及其制备方法”，张盛东；陈文新；黄如；刘晓彦；张兴；韩汝琦；王阳元，031370195。
118.“背栅MOS晶体管及其制作方法和静态随机存储器”，张盛东；陈文新；黄如；刘晓彦；张兴；韩汝琦；王阳元，031370209。