职称：助理教授，研究员
办公电话：62750590
电子邮箱：tkch@pku.edu.cn
个人主页：http://scholar.pku.edu.cn/kechao_tang
教育及工作经历
2017 – 2020，加州伯克利大学，博士后
2012 – 2017，斯坦福大学，材料科学与工程，博士学位
2008 – 2012，北京大学，物理学，学士学位
主要研究方向
通过材料生长、器件设计和制备流程等层面的创新，结合多角度表征和定量模型分析方法，致力于解决前沿微纳电子器件的核心问题，推动高性能存储和传感技术的应用。研究重点包括：
· 高质量铪基铁电薄膜外延生长
· FeFET铁电/半导体界面表征与优化
· 相变氧化物在存储和传感器件中的应用
研究概况
主要研究方向为基于过渡金属氧化物的新型存储与传感器件。长期从事新型存储器的原理研究与性能优化，并在红外技术和相变氧化物新器件领域取得多项有产业化潜力的突破。以第一/通讯作者在Science，Science Advances，Advanced Materials, Nano Letters, IEEE IEDM等顶级期刊和国际会议上发表学术论文，总论文数50余篇，引用2500余次，h因子为21。担任国际期刊Frontier of Neuroscience的客座主编，获斯坦福大学Hewlett Packard奖和Robert A. Huggins奖（全院仅一名），留学基金委“国家优秀自费留学生奖学金”等荣誉。
本课题组长期招收博士后研究员、硕士/博士研究生、本科生，欢迎感兴趣的同学和年轻学者联系：tkch@pku.edu.cn
代表性论文
[1] K. Tang#, K. Dong#, J. Li#, M. P. Gordon, F. G. Reichertz, H. Kim, Y. Rho, Q. Wang, C.-Y. Lin, C. P. Grigoropoulos, A. Javey, J. J. Urban, J. Yao, R. Levinson, J. Wu*, Temperature-adaptive radiative coating for all-season household thermal regulation. Science 374, 1504-1509 (2021).
[2] Z. Liang#, K. Tang#,*, J. Dong, Q. Li, Y. Zhou, R. Zhu, Y. Wu, D. Han, R. Huang*, A Novel High-Endurance FeFET Memory Device Based on ZrO2 Anti-Ferroelectric and IGZO Channel. In 2021 IEEE International Electron Devices Meeting (IEDM) (pp. 17.3.1-17.3.4).
[3] K. Tang#, K. Dong#, C. J. Nicolai, Y. Li, J. Li, S. Lou, C.-W. Qiu, D. H. Raulet, J. Yao, J. Wu*, Millikelvin-resolved ambient thermography. Science Advances 6, eabd8688 (2020).
[4] K. Tang, X. Wang, K. Dong, Y. Li, J. Li, B. Sun, X. Zhang, C. Dames, C. Qiu, J. Yao, J. Wu*, A Thermal Radiation Modulation Platform by Emissivity Engineering with Graded Metal–Insulator Transition. Advanced Materials 32, 1907071 (2020).
[5] K. Tang, R. Droopad, P. C. McIntyre*, Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects. Journal of Applied Physics 123, 025708 (2018).
[6] J. Park, J.-H. Kang, X. Liu, S. J. Maddox, K. Tang, P. C. McIntyre, S. R. Bank, M. L. Brongersma*, Dynamic thermal emission control with InAs-based plasmonic metasurfaces. Science Advances 4, eaat3163 (2018).
[7] K. Tang, A. C. Meng, F. Hui, Y. Shi, T. Petach, C. Hitzman, A. L. Koh, D. Goldhaber-Gordon, M. Lanza, P. C. McIntyre*, Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts. Nano Letters 17, 4390-4399 (2017).
[8] K. Tang, F. R. Palumbo, L. Zhang, R. Droopad, P. C. McIntyre*, Interface Defect Hydrogen Depassivation and Capacitance–Voltage Hysteresis of Al2O3/InGaAs Gate Stacks. ACS Applied Materials & Interfaces 9, 7819-7825 (2017).
[9] K. Tang, A. G. Scheuermann, L. Zhang, P. C. McIntyre*, Series resistance and gate leakage correction for improved border trap analysis of Al2O3/InGaAs gate stacks. Journal of Applied Physics 122, 094503 (2017).
[10] K. Tang, A. C. Meng, R. Droopad, P. C. McIntyre*, Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks. ACS Applied Materials & Interfaces 8, 30601-30607 (2016).
[11] A. G. Scheuermann, K. W. Kemp, K. Tang, D. Q. Lu, P. F. Satterthwaite, T. Ito, C. E. D. Chidsey, P. C. McIntyre*, Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes. Energy & Environmental Science 9, 504-516 (2016).