万博manbetx网页版在线登录 _ 2022welcome

您目前的位置: 万博manbetx网页版在线登录» 合作交流

斯坦福大学Tony Tae-Hyoung Kim教授来访我基地

2019912日,来自斯坦福大学 Eric Pop教授应邀来访我基地,并在微纳电子大厦205会议室做了题为Electronic, Thermal, and (Some) Unusual Applications of 2D Materials的学术报告。微纳电子学系多位老师以及研究生、本科生参加了报告会,并与报告人进行了热烈的讨论。

C:\Users\dell\AppData\Local\Microsoft\Windows\INetCache\Content.Word\微信图片_20190916083241.jpg

 

Electronic, Thermal, and (Some) Unusual Applications of 2D Materials

This talk will present recent highlights from our research on two-dimensional (2D) materials including graphene, boron nitride (h-BN), and transition metal dichalcogenides (TMDs). The results span from material growth and fundamental measurements, to simulations, devices and system-oriented applications that take advantage of unusual 2D material properties. We have grown monolayer 2D semiconductors over large areas, including MoS2 [1], WSe2, and MoSe2 [2]. We also uncovered that ZrSe2 and HfSe2 have native high-κ dielectrics ZrO2 and HfO2, which are of key technological relevance [3]. Improved electrical contacts [4] led to the realization of 10 nm monolayer MoS2 transistors with the highest current reported to date, near ballistic limits [5]. These could play a role in 3D heterogeneous integration of nanoelectronics, which presents significant advantages for energy-efficient computation [6]. In less conventional applications, we utilized 2D materials as computing fabrics for analog dot product circuits [7], as highly efficient thermal insulators [8], and as the basis of thermal transistors [9]. The last two examples could enable control of heat in “thermal circuits” analogous with electrical circuits. Combined, these studies reveal fundamental limits and some unusual applications of 2D materials, which take advantage of their unique properties.

Refs: [1] K. Smithe et al., ACS Nano 11, 8456 (2017). [2] K. Smithe et al., ACS AMI 1, 572 (2018). [3] M. Mleczko et al., Science Adv. 3, e1700481 (2017). [4] C. English et al., Nano Lett. 16, 3824 (2016). [5] C. English et al., IEDM, Dec 2016. [6] M. Aly et al., Computer 48, 24-33 (2015). [7] N. Wang et al., Symp. VLSI, Jun 2016. [8] S. Vaziri et al., Science Adv. 5, eaax1325 (2019). [9] A. Sood et al. Nature Comm. 9, 4510 (2018).